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2SC4452-3

Description
RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, NPN, MCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size38KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SC4452-3 Overview

RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, NPN, MCP, 3 PIN

2SC4452-3 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-based maximum capacity4 pF
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)750 MHz
VCEsat-Max0.25 V
Base Number Matches1
Ordering number:ENN2811
NPN Epitaxial Planar Silicon Transistor
2SC4452
High-Speed Switching Applications
Features
· High-speed switching.
· Low collector saturation voltage.
· High gain-bandwidth product.
· Small collector capacity.
· Ultrasmall package permitting applied sets to be
small and slim.
Package Dimensions
unit:mm
2059B
[2SC4452]
0.425
0.3
3
0 to 0.1
0.2
0.15
1.250
2.1
0.425
1
2
0.65 0.65
2.0
0.3
0.9
0.6
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
Ratings
40
40
15
5
200
500
40
150
150
–55 to +150
Unit
V
V
V
V
mA
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
VCB=20V, IE=0
VEB=3V, IC=0
VCE=1V, IC=10mA
VCE=10V, IC=10mA
VCB=5V, f=1MHz
Rank
hF
E
2
50 to 100
3
70 to 140
4
100 to 200
Conditions
Ratings
min
typ
max
0.1
0.1
50*
450
90
750
1.4
4.0
200*
Unit
µA
µA
MHz
pF
* : The 2SC4452 is classified by 10mA h
FE
as follows :
Marking : ST
h
FE
rank : 2, 3, 4
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90204TN (PC)/D2598HA (KT)/O278MO, TS No.2811–1/4

2SC4452-3 Related Products

2SC4452-3 2SC4452-2 2SC4452-4
Description RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, NPN, MCP, 3 PIN RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, NPN, MCP, 3 PIN RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, NPN, MCP, 3 PIN
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A
Collector-based maximum capacity 4 pF 4 pF 4 pF
Collector-emitter maximum voltage 15 V 15 V 15 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 70 50 100
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.15 W 0.15 W 0.15 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 750 MHz 750 MHz 750 MHz
VCEsat-Max 0.25 V 0.25 V 0.25 V
Base Number Matches 1 1 1
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