INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC5197
DESCRIPTION
·Low
Collector Saturation Voltage-
: V
CE(sat)
= 2.0V(Min) @I
C
= 6A
·Good
Linearity of h
FE
·Complement
to Type 2SA1940
APPLICATIONS
·Power
amplifier applications
·Recommend
for 55W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
120
V
120
V
5
V
8
A
0.8
A
80
W
150
℃
I
C
Collector Current-Continuous
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC5197
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 50mA ; I
B
= 0
120
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 6A; I
B
= 0.6A
B
2.0
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 4A ; V
CE
= 5V
1.5
V
I
CBO
Collector Cutoff Current
V
CB
= 120V ; I
E
= 0
5
μA
I
EBO
Emitter Cutoff Current
V
EB
= 5V; I
C
= 0
5
μA
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
C
OB
Output Capacitance
f
T
Current-Gain—Bandwidth Product
h
FE-1
Classifications
R
55-110
O
80-160
w
.cn
i
em
cs
.is
w
w
I
C
= 1A ; V
CE
= 5V
55
I
C
= 4A ; V
CE
= 5V
35
I
E
= 0; V
CB
= 10V;f
test
= 1.0MHz
I
C
= 1A ; V
CE
= 5V
160
120
pF
30
MHz
isc Website：www.iscsemi.cn
2
京公网安备 11010802033920号
EEWORLD
