2SC4501(L)/(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C (peak)
P
C
*
Tj
Tstg
1
Ratings
30
30
7
3
4
10
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
30
30
7
—
2000
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
0.4
1.2
0.8
Max
—
—
—
20
50000
1.5
2.0
2.0
3.5
—
—
—
µs
µs
µs
V
V
Unit
V
V
V
µA
Test conditions
I
C
= 0.1 mA, I
E
= 0
I
C
= 1 mA, R
BE
= _
I
E
= 0.1 mA, I
C
= 0
V
CB
= 24 V, R
BE
= _
V
CE
= 3 V, I
C
= 1.5 A*
1
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
V
(BR)EBO
I
CEO
h
FE
V
CE (sat)
V
CE (sat)
Base to emitter saturation
voltage
V
BE (sat)
V
BE (sat)
Turn on time
Turn off time
Storage time
Note:
1. Pulse test.
t
on
t
off
t
stg
I
C
= 1.5 A, I
B
= 3 mA*
I
C
= 3 A, I
B
= 30 mA*
1
1
I
C
= 1.5 A, I
B
= 3 mA*
I
C
= 3 A, I
B
= 30 mA*
I
C
= 1.5 A,
I
B1
= –I
B2
= 3 mA,
V
CC
= 30 V
1
1
2
2SC4501(L)/(S)
Maximum Collector Dissipation Curve
12
Collector power dissipation Pc (W)
8
4
0
50
100
Case Temperature T
C
(°C)
Area of Safe Operation
150
10
i
C (peak)
Collector Current I
C
(A)
3
1.0
0.3
0.1
0.03 Ta = 25°C
1 Shot Pulse
0.01
1
I
C (max)
DC
(T Op
e
C
=
25 ratio
°
C n
)
PW =
10 ms
3
10
30
100
Collector to emitter Voltage V
CE
(V)
Typical Output Characteristics
2.0
Ta = 25°C
100
90
80
70
60
50
40
30
20
10
µA
I
B
= 0
0
1
2
3
4
5
Collector to emitter Voltage V
CE
(V)
1m
s
Collector Current I
C
(A)
1.6
1.2
0.8
0.4
3
2SC4501(L)/(S)
DC Current Transfer Ratio
vs. Collector Current
100,000
DC current transfer ratio h
FE
30,000
V
CE
= 3 V
Ta = 25°C
10,000
3,000
1,000
0.03
0.1
0.3
1.0
Collector current I
C
(A)
3.0
Saturation Voltage vs. Collector Current
Collector to emitter saturation voltage
V
CE (sat)
(V)
Base to emitter saturation voltage
V
BE (sat)
(V)
10
3
V
BE (sat)
1.0
V
CE (sat)
0.3
l
C
= 500 l
B
Ta = 25°C
0.1
0.3
1.0
Collector current I
C
(A)
3.0
0.1
0.03
4
2SC4501(L)/(S)
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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Semiconductor & IC Div.
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Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
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5
Embedded System
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