2SK1672 datasheet, PDF - EEWORLD Datasheet

2SK1672: DescriptionPower Field-Effect Transistor, 1A I(D), 500V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3; CategoryDiscrete semiconductor The transistor; File Size142KB，2 Pages; ManufacturerSHINDENGEN; Websitehttps://www.shindengen.com

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2SK1672 Overview

Power Field-Effect Transistor, 1A I(D), 500V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	1 A
Maximum drain current (ID)	1 A
Maximum drain-source on-resistance	7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	10 W
Maximum power dissipation(Abs)	10 W
Maximum pulsed drain current (IDM)	3 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	130 ns
Maximum opening time (tons)	80 ns
Base Number Matches	1

	2SK1672	F1E50
Description	Power Field-Effect Transistor, 1A I(D), 500V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3	Power Field-Effect Transistor, 1A I(D), 500V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Contacts	3	3
Reach Compliance Code	unknow	unknown
ECCN code	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE
Minimum drain-source breakdown voltage	500 V	500 V
Maximum drain current (ID)	1 A	1 A
Maximum drain-source on-resistance	7 Ω	7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSIP-T3
Number of components	1	1
Number of terminals	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	10 W	10 W
Maximum pulsed drain current (IDM)	3 A	3 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	130 ns	130 ns
Maximum opening time (tons)	80 ns	80 ns
Base Number Matches	1	1

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