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2SC4504E

Description
RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, TO-243, PCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size75KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SC4504E Overview

RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, TO-243, PCP, 3 PIN

2SC4504E Parametric

Parameter NameAttribute value
Objectid1417102143
Parts packaging codeSOT-89
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-243
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment1.3 W
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)2200 MHz
Ordering number : EN3160B
2SC4504
SANYO Semiconductors
DATA SHEET
2SC4504
Features
NPN Epitaxial Planar Silicon Transistor
High-Definition CRT Display
Video Output Driver Applications
High fT (fT=2.2GHz typ).
High current (IC=300mA).
Adoption of FBET process.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (250mm
✕0.8mm)
2
Conditions
Ratings
30
20
3
300
600
0.5
1.3
150
--55 to +150
Unit
V
V
V
mA
mA
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
Conditions
VCB=20V, IE=0A
VEB=2V, IC=0A
VCE=5V, IC=50mA
VCE=5V, IC=300mA
40*
20
Ratings
min
typ
max
0.1
5.0
200*
Unit
μA
μA
Marking : CM
*:
The 2SC4504 is classified by 50mA hFE as follows:
Rank
hFE
C
40 to 80
D
60 to 120
E
100 to 200
Continued on next page
.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
33110AB TK IM / 92304TN (PC)/D2598HA (KT)/72895MO/6279MO, TS X-6587 No.3160-1/4

2SC4504E Related Products

2SC4504E 2SC4504D 2SC4504C
Description RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, TO-243, PCP, 3 PIN RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, TO-243, PCP, 3 PIN RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, TO-243, PCP, 3 PIN
Objectid 1417102143 1417102175 1417102161
Parts packaging code SOT-89 SOT-89 SOT-89
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 0.3 A 0.3 A 0.3 A
Collector-emitter maximum voltage 20 V 20 V 20 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 60 40
JEDEC-95 code TO-243 TO-243 TO-243
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Maximum power consumption environment 1.3 W 1.3 W 1.3 W
Maximum power dissipation(Abs) 0.5 W 0.5 W 0.5 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 2200 MHz 2200 MHz 2200 MHz
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