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2SD880-Y-BP

Description
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size268KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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2SD880-Y-BP Overview

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN

2SD880-Y-BP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
Base Number Matches1
MCC
Micro Commercial Components
TM
Features
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SD880-Q
2SD880-Y
2SD880-GR
NPN Silicon
Power Transistors
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Halogen
free available upon request by adding suffix "-HF"
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Power amplifier applications
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Mounting Torgue:
5
in-lbs Maximum
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
60
60
7
3
1.5
-55 to +150
-55 to +150
Unit
V
V
V
A
W
TO-220
B
F
Q
T
A
U
1 2
H
3
C
S
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
V
(BR)CEO
Symbol
Parameter
Min
Type
Max
Units
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
Collector-Emitter Breakdown Voltage
(I
C
=50mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector-Base Cutoff Current
(V
CB
=60Vdc,I
E
=0)
Emitter-Base Cutoff Current
(V
EB
=7Vdc, I
C
=0)
60
---
---
Vdc
K
60
---
---
Vdc
7
---
---
Vdc
---
---
100
uAdc
L
G
V
D
N
J
R
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
---
---
100
uAdc
V
CE(sat)
V
BE
f
T
C
ob
Classification OF h
FE(1)
Rank
Range
Q
60-120
t
on
t
s
t
f
Forward Current Transfer ratio
(I
C
=500mAdc, V
CE
=5Vdc)
Collector-Emitter Saturation Voltage
(I
C
=3Adc, I
B
=300mAdc)
Base-Emitter Voltage
(I
C
=0.5Adc,V
CE
=5Vdc)
Transistor Frequency
(I
C
=500mAdc, V
CE
=5Vdc)
Collector Output Capacitance
(V
CB
=10Vdc, I
E
=0, f=1MHz)
Turn on time
I
B1
=-I
B2
=0.2A, I
C
=2A,
Storage time
V
CC
=30V, PW=20us
Fall time
Y
100-200
60
---
---
---
300
1
---
Vdc
---
---
1
Vdc
DIM
A
B
C
D
F
G
H
J
K
L
N
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.560
.625
14.22
15.88
.380
.420
9.65
10.67
.140
.190
3.56
4.82
.020
.139
.190
---
.012
.500
.045
.190
.045
.161
.110
.250
.025
.580
.060
.210
0.51
3.53
2.29
---
0.30
12.70
1.14
4.83
1.14
4.09
2.79
6.35
0.64
14.73
1.52
5.33
NOTE
---
3
---
MHz
---
70
---
pF
---
---
---
0.8
1.5
0.8
---
---
---
GR
150-300
us
us
us
Q
R
S
T
U
V
.100
.080
.045
.230
-----
.045
.135
.115
.055
.270
.050
-----
2.54
2.04
1.14
5.84
-----
1.15
3.43
2.92
1.39
6.86
1.27
-----
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
Revision:
C
www.mccsemi.com
1
of 2
2013/01/01

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Description Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN Power Bipolar Transistor, Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN Power Bipolar Transistor, Power Bipolar Transistor,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Reach Compliance Code _compli _compli _compli _compli _compli _compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Humidity sensitivity level 1 1 1 1 1 1
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1 1 -
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