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2SC3298B-Y

Description
TRANSISTOR 1.5 A, 200 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size67KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SC3298B-Y Overview

TRANSISTOR 1.5 A, 200 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power

2SC3298B-Y Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment20 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max1.5 V
Base Number Matches1

2SC3298B-Y Related Products

2SC3298B-Y 2SC3298B-O
Description TRANSISTOR 1.5 A, 200 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power TRANSISTOR 1.5 A, 200 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
Reach Compliance Code unknow unknow
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 1.5 A 1.5 A
Collector-emitter maximum voltage 200 V 200 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 120 70
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
Maximum power consumption environment 20 W 20 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
VCEsat-Max 1.5 V 1.5 V
Base Number Matches 1 1
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