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2SK1816S

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size191KB,2 Pages
ManufacturerFuji Electric Co., Ltd.
Download Datasheet Parametric Compare View All

2SK1816S Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

2SK1816S Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)20 W
surface mountNO
Base Number Matches1

2SK1816S Related Products

2SK1816S 2SK1816L
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Reach Compliance Code unknow unknow
Configuration Single Single
Maximum drain current (Abs) (ID) 5 A 5 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 20 W 20 W
surface mount NO NO
Base Number Matches 1 1
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