Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD5702
DESCRIPTION
・With
TO-3P(H)IS package
・Built-in
damper diode
・High
voltage ,high speed
APPLICATIONS
・For
color display horizontal deflection
output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
・
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
固电
导½
半
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
HAN
INC
SEM
GE
Open emitter
Open base
Open collector
CONDITIONS
ON
IC
OR
DUT
VALUE
1500
800
6
6
16
UNIT
V
V
V
A
A
W
℃
℃
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
60
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
V
F
t
f
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Diode forward voltage
CONDITIONS
I
C
=4A ;I
B
=0.8A
I
C
=4A; I
B
=0.8A
V
CB
=800V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=1A ; V
CE
=10V
I
F
=6A
I
C
=4A ;I
B1
=0.8A;I
B2
=-1.6A
V
CC
=200V; R
L
=50Ω
40
10
5
3
MIN
2SD5702
TYP.
2.0
MAX
5.0
1.5
10
200
30
15
UNIT
V
V
μA
mA
MHz
2.0
0.4
V
μs
固电
Fall time
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD5702
固电
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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