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2SK831

Description
18A, 500V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size3MB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2SK831 Overview

18A, 500V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET

2SK831 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)18 A
Maximum drain current (ID)18 A
Maximum drain-source on-resistance0.45 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)60 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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