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2SD882-O

Description
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size75KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
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2SD882-O Overview

Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

2SD882-O Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SD882
2SD882-R
2SD882-O
2SD882-Y
2SD882-GR
NPN Silicon
Plastic-Encapsulate
Transistor

A
K
D
Features
Capable of 1.25Watts of Power Dissipation.
Collector-current 3.0A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Case Material: Molded Plastic.
Classification Rating 94V-0
UL Flammability
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=40Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=30Vdc, I
B
=0)
Emitter Cutoff Current
(V
EB
=6.0Vdc, I
C
=0)
DC Current Gain
(I
C
=1.0Adc, V
CE
=2.0Vdc)
DC Current Gain
(I
C
=100mAdc, V
CE
=2.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=2.0Adc, I
B
=0.2Adc)
Base-Emitter Saturation Voltage
(I
C
=2.0Adc, I
B
=0.2Adc)
Transition Frequency
(V
CE
=5.0Vdc, I
C
=0.1Adc, f=10MHz)
Min
30
40
6.0
---
---
---
Max
---
---
---
1.0
1.0
1.0
Units
Vdc
Vdc
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
R
Adc
uAdc
uAdc
E
B
F
M
N
uAdc
G
L
H
C
P
ON CHARACTERISTICS
h
FE-1
h
FE-2
V
CE(sat)
V
BE(sat)
fT
60
32
---
---
50
400
---
0.5
2.0
---
---
---
Vdc
Vdc
MHz
















!
1
2
J
3
J
Q
EMITTER
COLLECTOR
BASE
PIN 1.
PIN 2.
PIN 3.

 









































































 

CLASSIFICATION OF H
FE
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
www.mccsemi.com
1 of 2
Revision: 4
2007/03/01

2SD882-O Related Products

2SD882-O 2SD882-GR 2SD882-R 2SD882-R-B 2SD882-Y 2SD882 2SD882-O-B 2SD882-BP
Description Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 1-Element, Silicon, TO-126, PLASTIC PACKAGE-3 Transistor Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 1-Element, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Transistor Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible conform to
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 , FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 , PLASTIC PACKAGE-3
Reach Compliance Code compli compli compli unknow compli compli unknow _compli
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e3
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb) Matte Tin (Sn)
Base Number Matches 1 1 1 1 1 1 1 1
Parts packaging code SIP SIP SIP - SIP SIP - SIP
Contacts 3 3 3 - 3 3 - 3
ECCN code EAR99 EAR99 EAR99 - EAR99 EAR99 - EAR99
Configuration SINGLE SINGLE SINGLE - SINGLE SINGLE - SINGLE
JEDEC-95 code TO-126 TO-126 TO-126 - TO-126 TO-126 - TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3
Number of components 1 1 1 - 1 1 - 1
Number of terminals 3 3 3 - 3 3 - 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified - Not Qualified
surface mount NO NO NO - NO NO - NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE - SINGLE SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON - SILICON SILICON - SILICON
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