2SD882-O-B datasheet, PDF - EEWORLD Datasheet

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2SD882-O-B: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size75KB，2 Pages; ManufacturerMicro Commercial Components (MCC)

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2SD882-O-B Overview

Transistor

2SD882-O-B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	,
Reach Compliance Code	unknow
JESD-609 code	e0
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

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MCC

Micro Commercial Components

TM

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SD882

2SD882-R

2SD882-O

2SD882-Y

2SD882-GR

NPN Silicon

Plastic-Encapsulate

Transistor

A

K

D

Features

•

Capable of 1.25Watts of Power Dissipation.

Collector-current 3.0A

Collector-base Voltage 40V

Operating and storage junction temperature range: -55

O

C to +150

O

C

Case Material: Molded Plastic.

Classification Rating 94V-0

UL Flammability

Electrical Characteristics @ 25

O

C Unless Otherwise Specified

Symbol

Parameter

Collector-Emitter Breakdown Voltage

(I

C

=10mAdc, I

B

=0)

Collector-Base Breakdown Voltage

(I

C

=100uAdc, I

E

=0)

Emitter-Base Breakdown Voltage

(I

E

=100uAdc, I

C

=0)

Collector Cutoff Current

(V

CB

=40Vdc, I

E

=0)

Collector Cutoff Current

(V

CE

=30Vdc, I

B

=0)

Emitter Cutoff Current

(V

EB

=6.0Vdc, I

C

=0)

DC Current Gain

(I

C

=1.0Adc, V

CE

=2.0Vdc)

DC Current Gain

(I

C

=100mAdc, V

CE

=2.0Vdc)

Collector-Emitter Saturation Voltage

(I

C

=2.0Adc, I

B

=0.2Adc)

Base-Emitter Saturation Voltage

(I

C

=2.0Adc, I

B

=0.2Adc)

Transition Frequency

(V

CE

=5.0Vdc, I

C

=0.1Adc, f=10MHz)

Min

30

40

6.0

---

Max

---

1.0

Units

Vdc

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

CEO

I

EBO

R

Adc

uAdc

E

B

F

M

N

uAdc

G

L

H

C

P

ON CHARACTERISTICS

h

FE-1

h

FE-2

V

CE(sat)

V

BE(sat)

fT

60

32

---

50

400

---

0.5

2.0

---

Vdc

MHz

!

1

2

J

3

J

Q

EMITTER

COLLECTOR

BASE

PIN 1.

PIN 2.

PIN 3.

CLASSIFICATION OF H

FE

Rank

Range

R

60-120

O

100-200

Y

160-320

GR

200-400

www.mccsemi.com

1 of 2

Revision: 4

2007/03/01

2SD882-O-B Related Products

	2SD882-O-B	2SD882-GR	2SD882-O	2SD882-R	2SD882-R-B	2SD882-Y	2SD882	2SD882-BP
Description	Transistor	Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 1-Element, Silicon, TO-126, PLASTIC PACKAGE-3	Transistor	Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 1-Element, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	conform to
package instruction	,	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	,	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	PLASTIC PACKAGE-3
Reach Compliance Code	unknow	compli	compli	compli	unknow	compli	compli	_compli
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e3
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN LEAD	Matte Tin (Sn)
Base Number Matches	1	1	1	1	1	1	1	1
Parts packaging code	-	SIP	SIP	SIP	-	SIP	SIP	SIP
Contacts	-	3	3	3	-	3	3	3
ECCN code	-	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99
Configuration	-	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE
JEDEC-95 code	-	TO-126	TO-126	TO-126	-	TO-126	TO-126	TO-126
JESD-30 code	-	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	-	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	-	1	1	1	-	1	1	1
Number of terminals	-	3	3	3	-	3	3	3
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	-	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
surface mount	-	NO	NO	NO	-	NO	NO	NO
Terminal form	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	-	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	-	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON

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