INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD1133
DESCRIPTION
·Collector
Current: I
C
= 4A
·Low
Collector Saturation Voltage
: V
CE(sat)
= 1.0V(Max)@I
C
= 2A
·High
Collector Power Dissipation
·Complement
to Type 2SB857
APPLICATIONS
·Designed
for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
70
V
V
CEO
Collector-Emitter Voltage
50
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current-Continuous
4
A
I
CM
Collector Current-Peak
Total Power Dissipation
@ T
C
=25℃
Junction Temperature
8
A
P
C
40
W
T
J
150
℃
T
stg
Storage Temperature Range
-45~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(on)
I
CBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
CONDITIONS
I
C
= 50mA ; R
BE
=
∞
I
C
= 10μA ; I
E
= 0
I
E
= 10μA ; I
C
= 0
I
C
= 2A; I
B
= 0.2A
B
2SD1133
MIN
50
70
5
TYP.
MAX
UNIT
V
V
V
1.0
1.0
1
60
35
7
320
V
V
μA
I
C
= 1A ; V
CE
= 4V
V
CB
= 50V ; I
E
= 0
I
C
= 1A ; V
CE
= 4V
I
C
= 0.1A ; V
CE
= 4V
I
C
= 0.5A ; V
CE
= 4V
MHz
h
FE-1
Classifications
B
60-120
C
100-200
D
160-320
isc Website：www.iscsemi.cn
2
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