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2SK1540(S)

Description
0.8ohm, POWER, FET, LDPAK-3/2
CategoryDiscrete semiconductor    The transistor   
File Size89KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SK1540(S) Overview

0.8ohm, POWER, FET, LDPAK-3/2

2SK1540(S) Parametric

Parameter NameAttribute value
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknow
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage450 V
Maximum drain current (Abs) (ID)7 A
Maximum drain current (ID)7 A
Maximum drain-source on-resistance0.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)60 W
Maximum pulsed drain current (IDM)28 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK1540(L), 2SK1540(S)
Silicon N Channel MOS FET
REJ03G0952-0200
(Previous: ADE-208-1292)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
4
4
G
1. Gate
2. Drain
3. Source
4. Drain
S
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
1
1
2
3
2
3
Rev.2.00 Sep 07, 2005 page 1 of 7

2SK1540(S) Related Products

2SK1540(S) 2SK1540(L)
Description 0.8ohm, POWER, FET, LDPAK-3/2 7A, 450V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3
Parts packaging code TO-252 TO-252
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknow unknow
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 450 V 450 V
Maximum drain current (ID) 7 A 7 A
Maximum drain-source on-resistance 0.8 Ω 0.8 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSIP-T3
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 28 A 28 A
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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