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CAT28LV256GA-30

Description
IC 32K X 8 EEPROM 3V, 300 ns, PQCC32, LEAD FREE, PLASTIC, LCC-32, Programmable ROM
Categorystorage    storage   
File Size70KB,12 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric View All

CAT28LV256GA-30 Overview

IC 32K X 8 EEPROM 3V, 300 ns, PQCC32, LEAD FREE, PLASTIC, LCC-32, Programmable ROM

CAT28LV256GA-30 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeQFJ
package instructionQCCJ, LDCC32,.5X.6
Contacts32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time300 ns
command user interfaceNO
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PQCC-J32
JESD-609 codee3
length13.97 mm
memory density262144 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals32
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature105 °C
Minimum operating temperature-40 °C
organize32KX8
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeRECTANGULAR
Package formCHIP CARRIER
page size64 words
Parallel/SerialPARALLEL
power supply3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height3.55 mm
Maximum standby current0.00015 A
Maximum slew rate0.015 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
switch bitYES
width11.43 mm
Maximum write cycle time (tWC)10 ms
CAT28LV256
256K-Bit CMOS PARALLEL EEPROM
FEATURES
s
3.0V to 3.6V Supply
s
Read Access Times: 200/250/300 ns
s
Low Power CMOS Dissipation:
s
CMOS and TTL Compatible I/O
s
Automatic Page Write Operation:
– Active: 15 mA Max.
– Standby: 150
µ
A Max.
s
Simple Write Operation:
– 1 to 64 Bytes in 10ms
– Page Load Timer
s
End of Write Detection:
– On-Chip Address and Data Latches
– Self-Timed Write Cycle with Auto-Clear
s
Fast Write Cycle Time:
– Toggle Bit
DATA
Polling
s
Hardware and Software Write Protection
s
100,000 Program/Erase Cycles
s
100 Year Data Retention
– 10ms Max.
s
Commercial, Industrial and Automotive
Temperature Ranges
DESCRIPTION
The CAT28LV256 is a fast, low power, low voltage
CMOS Parallel E
2
PROM organized as 32K x 8-bits. It
requires a simple interface for in-system programming.
On-chip address and data latches, self-timed write cycle
with auto-clear and V
CC
power up/down write protection
eliminate additional timing and protection hardware.
DATA
Polling and Toggle status bits signal the start and
end of the self-timed write cycle. Additionally, the
CAT28LV256 features hardware and software write
protection.
The CAT28LV256 is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC–
approved 28-pin DIP, 28-pin TSOP or 32-pin PLCC
packages.
BLOCK DIAGRAM
A6–A14
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
ROW
DECODER
32,768 x 8
E
2
PROM
ARRAY
64 BYTE PAGE
REGISTER
VCC
HIGH VOLTAGE
GENERATOR
CE
OE
WE
CONTROL
LOGIC
I/O BUFFERS
TIMER
DATA POLLING
AND
TOGGLE BIT
COLUMN
DECODER
28LV256 F01
I/O0–I/O7
A0–A5
ADDR. BUFFER
& LATCHES
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
1
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