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2SK439E

Description
RF SMALL SIGNAL, FET, SPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size23KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SK439E Overview

RF SMALL SIGNAL, FET, SPAK-3

2SK439E Parametric

Parameter NameAttribute value
package instruction,
Contacts3
Reach Compliance Codecompli
ConfigurationSingle
Maximum drain current (Abs) (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.3 W
surface mountNO
Base Number Matches1
2SK439
Silicon N-Channel MOS FET
ADE-208-1172 (Z)
1st. Edition
Mar. 2001
Application
VHF amplifier
Outline
SPAK
1
23
1. Gate
2. Source
3. Drain

2SK439E Related Products

2SK439E 2SK439F 2SK439D
Description RF SMALL SIGNAL, FET, SPAK-3 RF SMALL SIGNAL, FET, SPAK-3 RF SMALL SIGNAL, FET, SPAK-3
Contacts 3 3 3
Reach Compliance Code compli compli compli
Configuration Single Single Single
Maximum drain current (Abs) (ID) 0.03 A 0.03 A 0.03 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W
surface mount NO NO NO
Base Number Matches 1 1 1

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Index Files: 1053  289  1083  1826  1030  22  6  37  21  33 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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