2SK439F datasheet, PDF - EEWORLD Datasheet

2SK439F: DescriptionRF SMALL SIGNAL, FET, SPAK-3; CategoryDiscrete semiconductor The transistor; File Size23KB，5 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2SK439F Overview

RF SMALL SIGNAL, FET, SPAK-3

Parameter Name	Attribute value
Contacts	3
Reach Compliance Code	compli
Configuration	Single
Maximum drain current (Abs) (ID)	0.03 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W
surface mount	NO
Base Number Matches	1

2SK439

Silicon N-Channel MOS FET

ADE-208-1172 (Z)

1st. Edition

Mar. 2001

Application

VHF amplifier

Outline

SPAK

1. Gate

2. Source

3. Drain

	2SK439F	2SK439E	2SK439D
Description	RF SMALL SIGNAL, FET, SPAK-3	RF SMALL SIGNAL, FET, SPAK-3	RF SMALL SIGNAL, FET, SPAK-3
Contacts	3	3	3
Reach Compliance Code	compli	compli	compli
Configuration	Single	Single	Single
Maximum drain current (Abs) (ID)	0.03 A	0.03 A	0.03 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W
surface mount	NO	NO	NO
Base Number Matches	1	1	1

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