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CHTB24-600PT

Description
Alternistor TRIAC, 600V V(DRM), 25A I(T)RMS, TO-220AB, TO-220AB, 3 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size179KB,2 Pages
ManufacturerCynergy 3
Environmental Compliance
Download Datasheet Parametric View All

CHTB24-600PT Overview

Alternistor TRIAC, 600V V(DRM), 25A I(T)RMS, TO-220AB, TO-220AB, 3 PIN

CHTB24-600PT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCynergy 3
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Shell connectionMAIN TERMINAL 2
ConfigurationSINGLE
Critical rise rate of commutation voltage - minimum value25 V/us
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current50 mA
Maximum DC gate trigger voltage1.3 V
Maximum holding current75 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum leakage current0.005 mA
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current25 A
Off-state repetitive peak voltage600 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeALTERNISTOR TRIAC
CHTA/CHTB 24
High Temperature
150˚C Series
25Amp - 400/600/800V - TRIAC
Applications
• Heat Regulation
• Ovens
• Coffee Makers
• Cookers
• Light Dimming
• Control of Inductive Loads
• Motors
• Transformers
#
Superior Commutating
Performance at High Temperature
(di/dt)c = 25A/ms @ (dv/dt)c = 50V/µs
#
Ideal for Most Demanding Applications
#
Alternistor/No Snubber Type
#
IGT 50 mA Max.
#
VDRM/VRMM 400, 600, 800V
Absolute Maximum Ratings
RMS On-State Current (full sine wave)
Non Repetitive Surge Peak On-State Current
(Full Cycle, Tj Initial = 25
˚
C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
=2 x I
GT
, tr<100 ns, T
j
= 150
˚
C
Peak Gate Current @ T
j
= 150˚C
Tc = 125˚C
Tc = 100˚C
CONDITIONS
SYMBOL
RATING
TO-220AB
TO-220AB Iso
F =50 Hz
F =60 Hz
tp = 10 ms
F =120 Hz
tp = 20 µs
I
T(RMS)
I
TSM
I
2
t
di/dt
I
GM
PG(AV)
T
stg
T
j
V
ISO
25A
285A
300A
400A
2
s
100A/µs
4A
1W
-40 to +150
˚
C
-40 to +150
˚
C
2500 V
RMS
A1
A2
G
Average Gate Power Dissipation @ Tj = 150
˚
C
Storage Temperature Range
Operating Junction Temperature Range
A2
TO-220AB Isolated
(CHTA24)
Isolation Voltage (CHTA Series only)
Electrical Characteristics
A1
A2
I
GT
MAX @ V
D
=12 V, R
L
= 33Ω
NOTE 1
G
QI-II-III
QI-II-III
Tj = 150
˚
C
QI-II-III
QI-II-III
NOTE 2
50mA
1.3V
0.15V
75mA
90mA
500V/µs
25A/ms
V
GT
MAX @ V
D
=12 V, R
L
= 33Ω
V
GD
MIN @ V
D
=V
DRM
, R
L
= 3.3kΩ
I
H
MAX @ I
T
= 500 mA
NOTE 2
I
L
MAX @ I
G
= 1.2 I
GT
A2
TO-220AB Non-Isolated
(CHTB24)
dv/dt MIN @ V
D
= 67%V
DRM
(gate open)
(di/dt)c MIN without snubber
NOTES 2 & 4
Tj = 150˚C
Tj = 150˚C
G
A1
Static Characteristics
V
T
MAX @ I
TM
=35A, tp = 380µs
NOTE 2
Vto MAX @ Threshold Voltage
NOTE 2
Rd MAX @ Dynamic Resistance
NOTE 2
I
DRM
MAX @ V
DRM =
V
RRM
I
RRM
MAX @ V
DRM =
V
RRM
GENERAL NOTES
1.
2.
3.
4.
Minimum IGT is guaranted at 5% of IGT max.
For both polarities of A2 referenced to A1
All parameters at 25 degrees C unless otherwise specified.
Commutating dv/dt = 50V/µs, (exponential to 200Vpk)
Tj = 25˚C
Tj = 150˚C
Tj = 150˚C
Tj = 25˚C
Tj = 150˚C
1.5V
0.8V
19mΩ
5µA
8.5mA
ISO
9001
C E R T I F I E D
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www.cynergy3.com
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