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IRFD213

Description
Small Signal Field-Effect Transistor, 0.45A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-250AA, TO-250, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size92KB,1 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

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IRFD213 Overview

Small Signal Field-Effect Transistor, 0.45A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-250AA, TO-250, 3 PIN

IRFD213 Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeDIP
package instructionIN-LINE, R-PDIP-T3
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage150 V
Maximum drain current (ID)0.45 A
Maximum drain-source on-resistance2.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-250AA
JESD-30 codeR-PDIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Transistor component materialsSILICON
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