FQB2NA90TM datasheet, PDF - EEWORLD Datasheet

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FQB2NA90TM: DescriptionPower Field-Effect Transistor, 2.8A I(D), 900V, 5.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3; CategoryDiscrete semiconductor The transistor; File Size705KB，9 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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FQB2NA90TM Overview

Power Field-Effect Transistor, 2.8A I(D), 900V, 5.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

FQB2NA90TM Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
Parts packaging code	D2PAK
package instruction	D2PAK-3
Contacts	3
Reach Compliance Code	not_compliant
Avalanche Energy Efficiency Rating (Eas)	310 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	900 V
Maximum drain current (Abs) (ID)	2.8 A
Maximum drain current (ID)	2.8 A
Maximum drain-source on-resistance	5.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	107 W
Maximum pulsed drain current (IDM)	11.2 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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FQB2NA90 / FQI2NA90

September 2000

QFET

FQB2NA90 / FQI2NA90

900V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

Features

•

2.8A, 900V, R

DS(on)

= 5.8

Ω

@ V

= 10 V

Low gate charge ( typical 15 nC)

Low Crss ( typical 6.5 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

! "

-PAK

FQB Series

G D S

-PAK

FQI Series

Absolute Maximum Ratings

Symbol

DSS

GSS

dv/dt

= 25°C unless otherwise noted

Parameter

Drain-Source Voltage

- Continuous (T

= 25°C)

Drain Current

- Continuous (T

= 100°C)

Drain Current

- Pulsed

(Note 1)

FQB2NA90 / FQI2NA90

900

2.8

1.77

11.2

(Note 2)

(Note 1)

(Note 3)

Units

V/ns

W/°C

°C

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T

= 25°C) *

Power Dissipation (T

= 25°C)

310

2.8

10.7

4.0

3.13

107

0.85

-55 to +150

300

, T

STG

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

θJC

θJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

Typ

Max

1.17

62.5

Units

°C/W

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, September 2000

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