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IKP06N60THKSA1

Description
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size515KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

IKP06N60THKSA1 Overview

Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

IKP06N60THKSA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
Shell connectionCOLLECTOR
Maximum collector current (IC)12 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)249 ns
Nominal on time (ton)17 ns
TRENCHSTOP™ Series
IKP06N60T
p
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features
Very low V
CE(sat)
1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Variable Speed Drive for washing machines, air conditioners and induction
cooking
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
Low EMI
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
C
G
E
PG-TO220-3
Type
IKP06N60T
V
CE
600V
I
C;Tc=100°C
V
CE(sat),Tj=25°C
6A
1.5V
T
j,max
175C
Marking
K06T60
Package
PG-TO220-3
Maximum Ratings
Parameter
Collector-emitter voltage
,
T
j
≥ 25C
DC collector current, limited by
T
jmax
T
C
= 25C
T
C
= 100C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area,
V
CE
= 600V,
T
j
= 175C,
t
p
= 1µs
Symbol
V
CE
I
C
I
Cpul s
-
I
F
I
Fpul s
V
GE
2)
Value
600
12
6
18
18
12
6
18
20
5
88
-40...+175
-55...+150
260
Unit
V
A
Diode forward current, limited by
T
jmax
T
C
= 25C
T
C
= 100C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
Power dissipation
T
C
= 25C
Operating junction temperature
Storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
1
2)
V
s
W
V
GE
= 15V,
V
CC
400V,
T
j
150C
t
SC
P
tot
T
j
T
stg
C
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.5 20.09.2013
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