IRFE9110
MECHANICAL DATA
Dimensions in mm (inches)
P–CHANNEL
POWER MOSFET
≈
2.16 (0.085)
1.27 (0.050)
1.07 (0.040)
9.14 (0.360)
8.64 (0.340)
12 13 14 15 16
1.39 (0.055)
1.02 (0.040)
11
7.62 (0.300)
7.12 (0.280)
17
18
1
2
0.76 (0.030)
0.51 (0.020)
10
9
8
V
DSS
I
D(cont)
R
DS(on)
-100V
-2.2A
1.2
W
7
6
5
4
3
1.65 (0.065)
1.40 (0.055)
0.33 (0.013)
Rad.
0.08 (0.003)
1.39 (0.055)
1.15 (0.045)
0.43 (0.017)
0.18 (0.007 Rad.
FEATURES
• SURFACE MOUNT
• SMALL FOOTPRINT
LCC4
MOSFET
GATE
DRAIN
SOURCE
• HERMETICALLY SEALED
PINS
4,5
1,2,15,16,17,18
6,7,8,9,10,11,12,13
TRANSISTOR
BASE
COLLECTOR
EMITTER
• DYNAMIC dv/dt RATING
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
• LIGHT WEIGHT
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
E
AS
dv/dt
T
J
, T
stg
Gate – Source Voltage
Continuous Drain Current @ T
case
= 25°C
Continuous Drain Current @ T
case
= 100°C
Pulsed Drain Current
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Surface Temperature ( for 5 sec).
±20V
– 2.2A
– 1.4A
– 8.8A
11W
0.090W/°C
87mJ
– 5.5V/ns
– 55 to +150°C
300°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
1/00
IRFE9110
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
BV
DSS
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Test Conditions
V
GS
= 0
I
D
= –1mA
Min.
–100
Typ.
Max.
Unit
V
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
Reference to 25°C
I
D
= –1mA
V
GS
= –10V
I
D
= –1.4A
V
GS
= –10V
V
DS
= V
GS
V
DS
³
–15V
V
GS
= 0
V
GS
= –20V
V
GS
= 20V
V
GS
= 0
V
DS
= –25V
f = 1MHz
V
GS
= –10V
I
D
= –2.2A
V
DS
= 0.5BV
DSS
V
DD
= –50V
I
D
= –2.2A
R
G
= 7.5
W
I
D
= –2.2A
I
D
= –250
m
A
I
DS
= –1.4A
V
DS
= 0.8BV
DSS
T
J
= 125°C
–2
0.8
– 0.10
1.2
1.38
–4
– 25
– 250
– 100
100
200
85
30
4.0
0.8
1.9
9.8
1.8
4.3
30
60
40
40
–2.2
–8.8
–5.5
200
9.0
Negligible
1.8
4.3
11
27
V / °C
W
S (
É
)
V
m
A
nA
pF
nC
ns
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
I
S
= –2.2A
T
J
= 25°C
Diode Forward Voltage
1
V
GS
= 0
Reverse Recovery Time
I
F
= –2.2A
T
J
= 25°C
Reverse Recovery Charge
1
d
i
/ d
t
£
–100A/
m
s V
DD
£
–50V
Forward Turn–On Time
PACKAGE CHARACTERISTICS
Internal Drain Inductance
(measured from 6mm down drain lead to centre of die)
Internal Source Inductance
(from 6mm down source lead to source bond pad)
THERMAL CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Junction – PC Board
A
V
ns
m
C
nH
R
q
JC
R
q
JPC
°C/W
Notes
1) Pulse Test: Pulse Width
£
300ms,
d £
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
1/00
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