FDP6030BL/FDB6030BL
July 2000
FDP6030BL/FDB6030BL
N-Channel Logic Level PowerTrench
MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
Features
• 40 A, 30 V. R
DS(ON)
= 0.018
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.024
Ω
@ V
GS
= 4.5 V.
• Critical DC electrical parameters specified at elevated
temperature.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• High performance trench technology for
extremely low R
DS(ON)
.
• 175°C maximum junction temperature rating.
D
D
G
G
D
TO-220
S
FDP Series
G
S
T
C
= 25°C unless otherwise noted
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
Parameter
FDP6030BL
FDB6030BL
30
±
20
Units
V
V
A
W
W/
°
C
°
C
°
C/W
°
C/W
- Continuous
- Pulsed
(Note 1)
40
120
60
0.36
-65 to +175
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
Operating and Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.5
62.5
Package Marking and Ordering Information
Device Marking
FDB6030BL
FDP6030BL
Device
FDB6030BL
FDP6030BL
Reel Size
13’’
Tube
Tape Width
24mm
N/A
Quantity
800
45
2000
Fairchild Semiconductor International
FDP6030BL/FDB6030BL Rev.C
FDP6030BL/FDB6030BL
Electrical Characteristics
Symbol
W
DSS
I
AR
T
C
= 25°C unless otherwise noted
Parameter
Test Conditions
(Note 1)
Min
Typ
Max
150
40
Units
mJ
A
DRAIN-SOURCE AVALANCHE RATINGS
Single Pulse Drain-Source
V
DD
= 15 V, I
D
= 40 A
Avalanche Energy
Maximum Drain-Source Avalnche Current
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250
µ
A
Breakdown Voltage Temperature I
D
= 250
µ
A, Referenced to 25
°
C
Coefficient
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
(Note 1)
Off Characteristics
BV
DSS
∆
BV
DSS
∆
T
J
I
DSS
I
GSSF
I
GSSR
30
23
1
100
-100
V
mV/
°
C
µ
A
nA
nA
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
On Characteristics
V
GS(th)
∆
V
GS(th)
∆
T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µ
A
I
D
= 250
µ
A, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 20 A,
V
GS
= 10 V, I
D
= 20 A, T
J
= 125
°
C
V
GS
= 4.5 V,I
D
= 17 A
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 5 V, I
D
= 20 A
1
1.6
-4.5
0.015
0.021
0.019
3
V
mV/
°
C
Ω
0.018
0.030
0.024
I
D(on)
g
FS
40
30
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 1)
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
1160
250
100
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
Ω
9
11
23
8
17
20
37
16
17
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
I
D
= 20 A, V
GS
= 5 V
12
3.2
3.7
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 20 A
(Note 1)
(Note 1)
40
0.95
1.2
A
V
Note:
1.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDP6030BL/FDB6030BL Rev.C
FDP6030BL/FDB6030BL
Typical Characteristics
80
I
D
, DRAIN-SOURCE CURRENT (A)
70
60
50
40
30
20
10
0
0
1
2
3
4
5
3.5V
2.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
10
20
30
40
50
3.5V
4.0V
4.5V
5.0V
7.0V
10V
V
GS
= 3.0V
V
GS
= 10V
6.0V
5.0V
4.5V
4.0V
3.0V
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.06
R
DS(ON)
, ON-RESISTANCE (OHM)
1.8
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
1.2
1
0.8
I
D
= 20A
V
GS
= 10V
I
D
= 10 A
0.05
0.04
0.03
T
A
= 125 C
0.02
0.01
0
T
A
= 25 C
o
o
V
GS
= 0V
0.6
-50
-25
0
25
50
75
100
o
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE ( C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
50
25 C
I
D
, DRAIN CURRENT (A)
40
125 C
30
o
o
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
10
T
A
= 125 C
1
25 C
0.1
0.01
0.001
0.0001
-55 C
o
o
o
V
DS
= 5V
T
A
= -55 C
o
20
10
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDP6030BL/FDB6030BL Rev.C
FDP6030BL/FDB6030BL
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 20A
8
(continued)
1600
V
DS
= 5V
15V
10V
CAPACITANCE (pF)
1400
1200
1000
800
600
400
200
0
C
OSS
C
RSS
0
5
10
15
20
C
ISS
f = 1 MHz
V
GS
= 0 V
6
4
2
0
0
5
10
15
20
25
25
30
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
1000
V
GS
= 10V
SINGLE PULSE
I
D
, DRAIN CURRENT (A)
R
θ
JC
= 2.5 C/W
100
T
C
= 25 C
R
DS(ON)
LIMIT
10
10ms
100ms
DC
o
o
Figure 8. Capacitance Characteristics.
2500
2000
POWER (W)
10
µ
s
100
µ
s
1ms
SINGLE PULSE
R
θ
JC
=2.5°C/W
T
C
= 25°C
1500
1000
500
1
0.1
1
10
100
0
0.01
0.1
1
10
100
1,000
SINGLE PULSE TIME (mSEC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
0.3
0.2
0.1
0.2
D = 0.5
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 2.5 °C/W
P(pk)
0.1
0.05
0.05
0.02
Single Pulse
t
1
0.03
0.01
0.02
0.01
0.01
t
2
T
J
- T
C
= P * R
θ
JC (t)
Duty Cycle, D = t
1
/t
2
0.1
1
t
1
,TIME (ms)
10
100
1000
Figure 11. Transient Thermal Response Curve.
FDP6030BL/FDB6030BL Rev.C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E
2
CMOS
TM
FACT™
FACT Quiet Series™
FAST
FASTr™
GTO™
DISCLAIMER
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. E
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