FDP6670S/FDB6670S
September 2001
FDP6670S/FDB6670S
30V N-Channel PowerTrench
®
SyncFET
™
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDP6670S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP6670S/FDB6670S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP6670A/FDB6670A in parallel
with a Schottky diode.
Features
•
31 A, 30 V.
R
DS(ON)
= 8.5 mΩ @ V
GS
= 10 V
R
DS(ON)
= 12.5 mΩ @ V
GS
= 4.5 V
•
Includes SyncFET Schottky body diode
•
Low gate charge (23nC typical)
•
High performance trench technology for extremely
low R
DS(ON)
and fast switching
•
High power and current handling capability
D
D
G
G
D
TO-220
S
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±20
(Note 1)
(Note 1)
Units
V
V
A
W
W/°C
°C
°C
62
150
62.5
0.5
–55 to +150
275
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.1
62.5
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDB6670S
FDP6670S
Device
FDB6670S
FDP6670S
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45
©2001
Fairchild Semiconductor Corporation
FDP6670S/FDB6670S Rev E(W)
FDP6670S/FDB6670S
Electrical Characteristics
Symbol
W
DSS
I
AR
T
A
= 25°C unless otherwise noted
Parameter
(Note 1)
Test Conditions
V
DD
= 25 V,
I
D
= 16.5 A
Min
Typ
Max Units
285
16.5
mJ
A
Drain-Source Avalanche Ratings
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
V
GS
= 0 V,
I
D
= 1mA
30
24
500
100
–100
V
mV/°C
µA
nA
nA
I
D
= 26mA, Referenced to 25°C
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= 0 V
V
DS
= 0 V
V
GS
= –20 V, V
DS
= 0 V
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= 1mA
1
2.2
–4.5
5
8
10
3
V
mV/°C
I
D
= 26mA, Referenced to 25°C
V
GS
= 10 V, I
D
= 31 A
V
GS
= 4.5 V, I
D
= 26.5 A
V
GS
=10 V, I
D
=31 A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 10 V,
V
DS
= 10 V
I
D
= 31 A
60
8.5
12.5
19
mΩ
I
D(on)
g
FS
A
69
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
2639
737
222
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
13
10
39
35
24
21
62
56
32
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 31 A,
23
9
8
Drain–Source Diode Characteristics
V
SD
t
rr
Q
rr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V, I
S
= 3.5 A
V
GS
= 0 V, I
S
= 7 A
I
F
= 3.5 A,
d
iF
/d
t
= 300 A/µs
(Note 1)
(Note 1)
0.39
0.48
32
56
0.7
0.9
V
nS
nC
(Note 2)
Notes:
1.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2.
See “SyncFET Schottky body diode characteristics” below.
FDP6670S/FDB6670S Rev E (W)
FDP6670S/FDB6670S
Typical Characteristics
150
2.2
5.0V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
120
I
D
, DRAIN CURRENT (A)
6.0V
2
V
GS
= 4.0V
4.5V
90
1.8
1.6
1.4
1.2
1
0.8
4.5V
5.0V
6.0V
7.0V
8.0V
10V
60
4.0V
30
3.5V
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
5
0
30
60
90
I
D
, DRAIN CURRENT (A)
120
150
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.027
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
I
D
= 31A
V
GS
= 10V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.4
I
D
= 15.5A
0.022
0.017
1.2
T
A
= 125 C
0.012
T
A
= 25 C
0.007
o
o
1
0.8
0.002
2
0.6
-50
-25
0
25
50
75
100
125
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
80
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
60
T
A
= -55 C
25 C
125 C
o
o
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
I
S
, REVERSE DRAIN CURRENT (A)
o
V
GS
= 0V
T
A
= 125 C
1
25 C
0.1
-55 C
o
o
o
40
20
0
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
4.5
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6670S/FDB6670S Rev E (W)
FDP6670S/FDB6670S
Typical Characteristics
(continued)
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 31A
V
DS
= 10V
15V
3600
f = 1MHz
V
GS
= 0 V
3000
20V
CAPACITANCE (pF)
2400
1800
1200
600
C
RSS
0
C
OSS
C
ISS
8
6
4
2
0
0
10
20
30
40
50
Q
g
, GATE CHARGE (nC)
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W)
1000
Figure 8. Capacitance Characteristics.
I
D
, DRAIN CURRENT (A)
10us
R
DS(ON)
LIMIT
100µs
1ms
10ms
800
SINGLE PULSE
R
θJC
= 2.1°C/W
T
A
= 25°C
100
600
10
V
GS
= 10V
SINGLE PULSE
o
R
θJC
= 2.1 C/W
o
T
A
= 25 C
100ms
DC
400
200
1
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
R
θ
J C
(t) = r(t) * R
θ
J C
R
θ
J C
= 2.1 °C/W
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
P(pk
t
1
t
2
T
J
- Tc = P * R
θJ
C
(t)
Duty Cycle, D = t
1
/ t
2
0.01
0.00001
0.0001
0.001
t
1
, TIME (sec)
0.01
0.1
1
Figure 11. Transient Thermal Response Curve.
FDP6670S/FDB6670S Rev E (W)
FDP6670S/FDB6670S
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6670S.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
0.01
T
A
= 100 C
o
I
DSS
, REVERSE LEAKAGE CURRENT (A)
CURRENT: 0.8A/div
0.001
0.0001
T
A
= 25 C
o
TIME: 12.5ns/div
0.00001
Figure 12. FDP6670S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6670A).
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
CURRENT: 0.8A/div
TIME: 12.5ns/div
Figure 13. Non-SyncFET (FDP6670A) body
diode reverse recovery characteristic.
FDP6670S/FDB6670S Rev E (W)
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