FDP6670SJ69Z datasheet, PDF - EEWORLD Datasheet

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FDP6670SJ69Z: DescriptionPower Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size94KB，6 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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FDP6670SJ69Z Overview

Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

FDP6670SJ69Z Parametric

Parameter Name	Attribute value
Maker	Fairchild
Parts packaging code	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	285 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	62 A
Maximum drain-source on-resistance	0.0085 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	150 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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FDP6670S/FDB6670S

September 2001

FDP6670S/FDB6670S

30V N-Channel PowerTrench

SyncFET

™

General Description

This MOSFET is designed to replace a single MOSFET

and parallel Schottky diode in synchronous DC:DC

power supplies. This 30V MOSFET is designed to

maximize power conversion efficiency, providing a low

DS(ON)

and low gate charge. The FDP6670S includes

an integrated Schottky diode using Fairchild’s

monolithic SyncFET technology. The performance of

the FDP6670S/FDB6670S as the low-side switch in a

synchronous rectifier is indistinguishable from the

performance of the FDP6670A/FDB6670A in parallel

with a Schottky diode.

Features

•

31 A, 30 V.

DS(ON)

= 8.5 mΩ @ V

= 10 V

DS(ON)

= 12.5 mΩ @ V

= 4.5 V

•

Includes SyncFET Schottky body diode

•

Low gate charge (23nC typical)

•

High performance trench technology for extremely

low R

DS(ON)

and fast switching

•

High power and current handling capability

TO-220

FDP Series

TO-263AB

FDB Series

Absolute Maximum Ratings

Symbol

DSS

GSS

, T

STG

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

=25 C unless otherwise noted

Parameter

Ratings

±20

(Note 1)

Units

W/°C

°C

150

62.5

0.5

–55 to +150

275

Total Power Dissipation @ T

= 25°C

Derate above 25°C

Operating and Storage Junction Temperature Range

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

Thermal Characteristics

θJC

θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

2.1

62.5

°C/W

Package Marking and Ordering Information

Device Marking

FDB6670S

FDP6670S

Device

FDB6670S

FDP6670S

Reel Size

13’’

Tube

Tape width

24mm

n/a

Quantity

800 units

Fairchild Semiconductor Corporation

FDP6670S/FDB6670S Rev E(W)

FDP6670SJ69Z Related Products

	FDP6670SJ69Z	FDB6670SL99Z	FDB6670S_NL	FDB6670SL86Z	FDB6670SS62Z
Description	Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN	Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN	Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3	Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3	Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Maker	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild
package instruction	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	D2PAK-3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown	not_compliant	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	285 mJ	285 mJ	285 mJ	285 mJ	285 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V	30 V	30 V
Maximum drain current (ID)	62 A	62 A	62 A	62 A	62 A
Maximum drain-source on-resistance	0.0085 Ω	0.0085 Ω	0.0085 Ω	0.0085 Ω	0.0085 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1	1	1
Number of terminals	3	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	150 A	150 A	150 A	150 A	150 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	YES	YES	YES
Terminal form	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Parts packaging code	SFM	D2PAK	D2PAK	D2PAK	-
Contacts	3	4	3	3	-
Shell connection	-	DRAIN	DRAIN	DRAIN	DRAIN
JEDEC-95 code	-	TO-263AB	TO-263AB	TO-263AB	TO-263AB

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