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FDP6690S/FDB6690S
SEPTEMBER 2001
FDP6690S/FDB6690S
30V N-Channel PowerTrench
®
SyncFET
™
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDP6690S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP6690S/FDB6690S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP6035AL/FDB6035AL in parallel
with a Schottky diode.
Features
•
21 A, 30 V.
R
DS(ON)
= 15.5 mΩ @ V
GS
= 10 V
R
DS(ON)
= 23.0 mΩ @ V
GS
= 4.5 V
•
Includes SyncFET Schottky body diode
•
Low gate charge (11nC typical)
•
High performance trench technology for extremely
low R
DS(ON)
and fast switching
•
High power and current handling capability
D
D
G
G
D
TO-220
S
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±20
(Note 1)
(Note 1)
Units
V
V
A
W
W/°C
°C
°C
42
140
48
0.5
–55 to +150
275
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.6
62.5
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDB6690S
FDP6690S
Device
FDB6690S
FDP6690S
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45
©2001
Fairchild Semiconductor Corporation
FDP6690S/FDB6690S Rev C (W)
FDP6690S/FDB6690S
Electrical Characteristics
Symbol
W
DSS
I
AR
T
A
= 25°C unless otherwise noted
Parameter
(Note 2)
Test Conditions
Single Pulse, V
DD
= 25 V, I
D
=11A
Min
Typ
Max Units
140
11
mJ
A
Drain-Source Avalanche Ratings
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
V
GS
= 0 V,
I
D
= 1mA
30
25
500
100
–100
V
mV/°C
µA
nA
nA
I
D
= 10mA, Referenced to 25°C
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= 0 V
V
DS
= 0 V
V
GS
= –20 V, V
DS
= 0 V
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= 1mA
1
2.2
–4
12.0
18.5
18.0
3
V
mV/°C
I
D
= 10mA, Referenced to 25°C
V
GS
= 10 V, I
D
= 21 A
V
GS
= 4.5 V, I
D
= 17 A
V
GS
=10 V, I
D
=21 A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 10 V,
V
DS
= 10 V
I
D
= 23 A
60
15.5
23.0
22.5
mΩ
I
D(on)
g
FS
A
33
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
1238
342
104
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
11
9
23
13
20
18
37
23
15
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 21A,
11
5
4
Drain–Source Diode Characteristics
V
SD
t
rr
Q
rr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V, I
S
= 3.5 A
V
GS
= 0 V, I
S
= 7 A
I
F
= 3.5 A,
d
iF
/d
t
= 300 A/µs
(Note 1)
(Note 1)
0.51
0.69
21
25
0.7
V
nS
nC
(Note 2)
Notes:
1.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2.
See “SyncFET Schottky body diode characteristics” below.
FDP6690S/FDB6690S Rev C (W)
FDP6690S/FDB6690S
Typical Characteristics
80
2.2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
6.0V
5.0V
V
GS
= 4.0V
2
1.8
1.6
1.4
1.2
1
0.8
I
D
, DRAIN CURRENT (A)
60
4.5V
40
4.5V
5.0V
6.0V
7.0V
8.0V
10V
4.0V
20
3.5V
0
0
1
2
3
4
V
D S
, DRAIN-SOURCE VOLTAGE (V)
5
0
20
40
I
D
, DRAIN CURRENT (A)
60
80
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.055
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 21A
V
GS
=10V
I
D
= 21 A
0.045
1.4
1.2
0.035
T
A
= 125 C
0.025
T
A
= 25 C
0.015
o
o
1
0.8
0.6
-50
0.005
-25
0
25
50
75
o
T
J
, JUNCTION TEMPERATURE ( C)
100
125
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
40
V
D S
= 5V
I
D
, DRAIN CURRENT (A)
30
I
S
, REVERSE DRAIN CURRENT (A)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
T
A
= -55 C
o
V
GS
= 0V
25 C
125 C
o
o
1
20
T
A
= 125 C
25 C
0.1
o
o
o
10
-55 C
0
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.01
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6690S/FDB6690S Rev C (W)
FDP6690S/FDB6690S
Typical Characteristics
(continued)
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 21A
V
D S
= 10V
15V
1600
C
ISS
CAPACITANCE (pF)
1200
f = 1MHz
V
GS
= 0 V
8
20V
6
800
C
OSS
400
4
2
C
RSS
0
0
5
10
15
20
25
Q
g
, GATE CHARGE (nC)
0
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000
2000
Figure 8. Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
I
D
, DRAIN CURRENT (A)
1600
SINGLE PULSE
R
θJC
= 2.6°C/W
T
A
= 25°C
10µs
R
DS(ON)
LIMIT
100µs
1ms
10ms
100ms
DC
100
1200
800
10
V
GS
= 10V
SINGLE PULSE
o
R
θJC
= 2.6 C/W
o
T
A
= 25 C
400
1
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.00001
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
R
θ
JC
(t) = r(t) * R
θ
J C
R
θJ
C
= 2.6 °C/W
0.2
0.1
0.05
0.02
0.01
SINGLE
PULSE
0.1
P(pk
t
1
t
2
T
J
- Tc = P * R
θ
JC
(t)
Duty Cycle, D = t
1
/ t
2
0.01
0.00001
0.0001
0.001
t
1
, TIME (sec)
0.01
0.1
1
Figure 11. Transient Thermal Response Curve.
FDP6690S/FDB6690S Rev C (W)
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