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PRSB6.8C-LF-T75-1

Description
Trans Voltage Suppressor Diode, 10W, 4.7V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, DFN-2
CategoryDiscrete semiconductor    diode   
File Size92KB,5 Pages
ManufacturerProTek Devices
Websitehttp://www.protekdevices.com/
Environmental Compliance  
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PRSB6.8C-LF-T75-1 Overview

Trans Voltage Suppressor Diode, 10W, 4.7V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, DFN-2

PRSB6.8C-LF-T75-1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerProTek Devices
Parts packaging codeDFN
package instructionR-XBCC-N2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW CAPACITANCE
Minimum breakdown voltage5.7 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-XBCC-N2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation10 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)270
polarityBIDIRECTIONAL
Maximum power dissipation0.15 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage4.7 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
05224
PRSB6.8C
Only One Name Means ProT
ek’Tion™
ST
ANDARD TVS COMPONENTS
APPLICA
TIONS
Noise Suppression for Data Lines
Laptop Computers
Cellular Phones
Digital Cameras
Personal Digital Assistants (PDAs)
IEC COMPA
TIBILITY
(EN61000-4)
61000-4-2 (ESD): Air - 15kV, Contact - 8kV
61000-4-4 (EFT): 40A - 5/50ns
FEA
TURES
10 Watts Peak Pulse Power per Line (tp = 10/1000µs)
ESD Protection > 40 kilovolts
Bidirectional Configuration
Protects One Data Line
Low Clamping Voltage
Easy Placement for Manufacturing
LOW CAPACITANCE
RoHS Compliant in Lead-Free Versions
MECHANICAL CHARACTERISTICS
DFN-2 Package
Weight 0.73 milligrams (Approximate)
Available in Tin-Lead or Lead-Free Pure-Tin Plating(Annealed)
Solder Reflow Temperature:
Tin-Lead - Sn/Pb, 85/15: 240-245°C
Pure-Tin - Sn, 100: 260-270°C
Flammability Rating UL 94V-0
8mm Tape and Reel Per EIA Standard 481
Device Part Number on Reel & Marking Code on Device
PIN CONFIGURA
TION
05224.R3 9/05
1
www.protekdevices.com

PRSB6.8C-LF-T75-1 Related Products

PRSB6.8C-LF-T75-1 PRSB6.8C-T75-1
Description Trans Voltage Suppressor Diode, 10W, 4.7V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, DFN-2 Trans Voltage Suppressor Diode, 10W, 4.7V V(RWM), Bidirectional, 1 Element, Silicon, DFN-2
Is it Rohs certified? conform to incompatible
Maker ProTek Devices ProTek Devices
Parts packaging code DFN DFN
package instruction R-XBCC-N2 R-XBCC-N2
Contacts 2 2
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features LOW CAPACITANCE LOW CAPACITANCE
Minimum breakdown voltage 5.7 V 5.7 V
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code R-XBCC-N2 R-XBCC-N2
JESD-609 code e3 e0
Maximum non-repetitive peak reverse power dissipation 10 W 10 W
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) 270 245
polarity BIDIRECTIONAL BIDIRECTIONAL
Maximum power dissipation 0.15 W 0.15 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 4.7 V 4.7 V
surface mount YES YES
technology AVALANCHE AVALANCHE
Terminal surface Tin (Sn) TIN LEAD
Terminal form NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED

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