DATA SHEET
P6SMBJ SERIES
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE
FEATURES
• For surface mounted applications in order to optimize board space.
• Built-in strain relief
• Glass passivated junction
.083(2.11)
.155(3.94)
.130(3.30)
.075(1.91)
5.0 to 220 Volts
PEAK PULSE POWER
600 Watts
SMB/DO-214AA
Unit: inch (mm)
• Low profile package
• Low inductance
• Typical I
D
less than 1.0µA above 10V
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• High temperature soldering : 260°C /10 seconds at terminals
.185(4.70)
.160(4.06)
.012(.305)
.006(.152)
.096(2.44)
.083(2.13)
• Pb free product are available : 99% Sn above can meet Rohs environment
substance directive request
.050(1.27)
.030(0.76)
MECHANICALDATA
Case: JEDEC DO-214AA,Molded plastic over passivated junction.
Terminals: Solder plated,solderable per MIL-STD-202G,Method 208
Polarity: Color band denotes positive end (cathode)
Standard Packaging:12mm tape (EIA-481)
Weight: 0.003 ounce, 0.093 gram
.220(5.59)
.200(5.08)
.008(.203)
.002(.051)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types P6SMBJ5.0 thru types P6SMBJ220.
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
R atng
i
P eak P ul e P ow erD i si aton on 10/ 000uS w avef r ( ot s 1, ,Fi . )
s
s p i
1
om N e
2 g1
P eak For ar S ur e C urent8. m s si gl hal si e- ave
w d
g
r
3
n e
f n w
superm posed on r t d l ad ( E D E C M et od)( ot s 2, )
i
ae o
J
h
N e
3
P eak P ul e C urenton 10/ 000s w avef r ( ot 1) i .
s
r
1
om N e Fg3
O per tng Juncton and S t r ge Tem per t r R ange
ai
i
oa
aue
S ym bol
P
PPM
FSM
I
Val e
u
M i .600
n
100
see Tabl 1
e
- 5 t +150
5 o
U nis
t
W ats
t
A m ps
A m ps
O
PPM
I
T
T
J
,
STG
C
NOTES:
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
O
C per Fig. 2.
2. Mounted on 5.0mm
2
(0.13mm thick) land areas.
3. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
STAD-DEC.17.2004
PAGE . 1
P
PPM
,PEAK PULSE FORWARD,KW
100
Non-Repetitve
Pulse Wavefom
Shown in Figure.3
T
A
= 25
O
C
100
PEAK PULSE FORWARD (P
PP
) OR CURRENT (I
PP
)
DERATING IN PERCENTAGE %
75
10
50
1.0
25
Mounted on 5.0mm
Copper Land Areas
0.1
0.1
1.0
10
100
1000
10000
0
0
25
50
75
100
125
150
175
200
td,PULSE WIDTH, micro sec
T
A
,AMBIENT TEMPERATURE,
O
C
Fig.1 PEAK PULSE POWER RATING CURVE
Fig.2 DERATING CURVE
I
PPM
,PEAK PULSE CURRENT,%
150
tf = 10usec
T
A
= 25 C
Pulse Width (td) is Defined
as the Point where the Peak
Current Decayst to 50% of Ipp
O
6,000
4,000
Tj= 25 C
f= 1.0MHZ
Vsig = 50mVp -p
100
Peak Value
Ippm
2,000
Ha lf Va lue -Ip p
2
C
J
,CAPACIT
ANCE,p F
Me a sure d a t
Ze ro Bia s
50
10/1000u se c Wa ve fo rm
a s De fine d b ye R.E.A.
1,000
800
600
400
Me a sure d a t
Sta nd -Off
Vo lta Ge (V
RWM
)
e -kt
td
0
0
1.0
2.0
3.0
4.0
200
T,TIME,ms
Fig.3 PULSE WAVEFORM
100
80
60
40
20
I
FSM
,PEAK FORWARD SURGE CURRENT,
AMPERES
200
T
J
= T
J
ma x
8.3ms S le Ha lf Sine -Wa ve
ing
JEDEC M e tho d
10
100
1.0
2.0
5.0
10
20
50 100
200
V(
RWM
), REVERSE STAND-OFF VOLTAGE, VOLTS
50
Fig.4 TYPICAL CAPACITANCE
10
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
Fig.5 MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
STAD-DEC.17.2004
PAGE . 4
Microcontroller MCU
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