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FQPF2N50C

Description
Power Field-Effect Transistor, 2A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size887KB,10 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

FQPF2N50C Overview

Power Field-Effect Transistor, 2A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

FQPF2N50C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-220AB
package instructionTO-220F, 3 PIN
Contacts3
Reach Compliance Codenot_compliant
Avalanche Energy Efficiency Rating (Eas)155 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)2 A
Maximum drain-source on-resistance2.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)8 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
FQP2N50C / FQPF2N50C
QFET
FQP2N50C / FQPF2N50C
500 V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
®
Features
2 A, 500 V, R
DS(on)
= 2.5
@ V
GS
= 10 V
Low gate charge ( typical 10 nC)
Low Crss ( typical 8.5 pF)
Fast switching
100 % avalanche tested
Improved dv/dt capability
D
!
G
!
G DS
TO-220
FQP
GD S
TO-220F
FQPF
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQP2N50C
500
2
1.2
8
FQPF2N50C
2*
1.2 *
8*
±
30
155
2
5.5
4.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
55
0.44
-55 to +150
300
20
0.16
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP2N50C
2.27
0.5
62.5
FQPF2N50C
6.25
--
62.5
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004

FQPF2N50C Related Products

FQPF2N50C FQP2N50C
Description Power Field-Effect Transistor, 2A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Power Field-Effect Transistor, 2A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Is it Rohs certified? conform to conform to
Maker Fairchild Fairchild
Parts packaging code TO-220AB TO-220AB
package instruction TO-220F, 3 PIN FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code not_compliant compliant
Avalanche Energy Efficiency Rating (Eas) 155 mJ 155 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V
Maximum drain current (ID) 2 A 2 A
Maximum drain-source on-resistance 2.5 Ω 2.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 8 A 8 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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