FQP2N50C datasheet, PDF - EEWORLD Datasheet

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FQP2N50C: DescriptionPower Field-Effect Transistor, 2A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size887KB，10 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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FQP2N50C Overview

Power Field-Effect Transistor, 2A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FQP2N50C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	155 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	2.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	8 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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FQP2N50C / FQPF2N50C

QFET

FQP2N50C / FQPF2N50C

500 V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction, electronic lamp ballasts

based on half bridge topology.

Features

•

2 A, 500 V, R

DS(on)

= 2.5

Ω

@ V

= 10 V

Low gate charge ( typical 10 nC)

Low Crss ( typical 8.5 pF)

Fast switching

100 % avalanche tested

Improved dv/dt capability

●

◀

▲

●

G DS

TO-220

FQP

GD S

TO-220F

FQPF

Absolute Maximum Ratings

Symbol

DSS

GSS

dv/dt

, T

STG

= 25°C unless otherwise noted

Parameter

Drain-Source Voltage

- Continuous (T

= 25°C)

Drain Current

- Continuous (T

= 100°C)

Drain Current

- Pulsed

(Note 1)

FQP2N50C

500

1.2

FQPF2N50C

1.2 *

155

5.5

4.5

Units

V/ns

W/°C

°C

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T

= 25°C)

(Note 2)

(Note 1)

(Note 3)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

0.44

-55 to +150

300

0.16

* Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

θJC

θJS

θJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

FQP2N50C

2.27

0.5

62.5

FQPF2N50C

6.25

62.5

Units

°C/W

Rev. A, October 2004

FQP2N50C Related Products

	FQP2N50C	FQPF2N50C
Description	Power Field-Effect Transistor, 2A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 2A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
Is it Rohs certified?	conform to	conform to
Maker	Fairchild	Fairchild
Parts packaging code	TO-220AB	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	TO-220F, 3 PIN
Contacts	3	3
Reach Compliance Code	compliant	not_compliant
Avalanche Energy Efficiency Rating (Eas)	155 mJ	155 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V
Maximum drain current (ID)	2 A	2 A
Maximum drain-source on-resistance	2.5 Ω	2.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	8 A	8 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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