GM71V16400C
GM71VS16400CL
4,194,304 WORDS x 4 BIT
CMOS DYNAMIC RAM
Description
The GM71V(S)16400C/CL is the new
generation dynamic RAM organized 4,194,304
words x 4 bit. GM71V(S)16400C/CL has
realized higher density, higher performance and
various functions by utilizing advanced CMOS
process technology. The GM71V(S)16400C/CL
offers Fast Page Mode as a high speed access
mode. Multiplexed address inputs permit the
GM71V(S)16400C/CL to be packaged in a
standard 300 mil 24(26) pin SOJ, and a standard
300 mil 24(26) pin plastic TSOP II. The
package size provides high system bit densities
and is compatible with widely available
automated testing and insertion equipment.
System oriented features include single power
supply 3.3V+/-0.3V tolerance, direct interfacing
capability with high performance logic families
such as Schottky TTL.
Features
* 4,194,304 Words x 4 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (3.3V+/-0.3V)
* Fast Access Time & Cycle Time
(Unit: ns)
t
RAC
t
CAC
GM71V(S)16400C/CL-5
GM71V(S)16400C/CL-6
GM71V(S)16400C/CL-7
50
60
70
13
15
18
t
RC
90
110
130
t
PC
35
40
45
Pin Configuration
24(26) SOJ
V
CC
I/O1
I/O2
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
26
25
24
23
22
21
* Low Power
Active : 324/288/252mW (MAX)
Standby : 7.2mW (CMOS level : MAX)
: 0.36mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 4096 Refresh Cycles/64ms
* 4096 Refresh Cycles/128ms (L-version)
* Self Refresh Operation (L-version)
* Battery backup operation (L-version)
* Test function : 16bit parallel test mode
24(26) TSOP II
V
SS
I/O4
I/O3
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
V
CC
I/O1
I/O2
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
26
25
24
23
22
21
V
SS
I/O4
I/O3
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
8
9
10
11
12
13
19
18
17
16
15
14
8
9
10
11
12
13
19
18
17
16
15
14
(Top View)
Rev 0.1 / Apr’01
GM71V16400C
GM71VS16400CL
Pin Description
Pin
A0-A11
A0-A11
I/O1-I/O4
RAS
CAS
Function
Address Inputs
Refresh Address Inputs
Data Input/Data Output
Row Address Strobe
Column Address Strobe
Pin
WE
OE
V
CC
V
SS
NC
Function
Read/Write Enable
Output Enable
Power (+3.3V)
Ground
No Connection
Ordering Information
Type No.
GM71V(S)16400CJ/CLJ-5
GM71V(S)16400CJ/CLJ-6
GM71V(S)16400CJ/CLJ-7
GM71V(S)16400CT/CLT-5
GM71V(S)16400CT/CLT-6
GM71V(S)16400CT/CLT-7
Access Time
50ns
60ns
70ns
50ns
60ns
70ns
Package
300 Mil
24(26) Pin
Plastic SOJ
300 Mil
24(26) Pin
Plastic TSOP II
Absolute Maximum Ratings
Symbol
T
A
T
STG
V
IN/OUT
V
CC
I
OUT
P
D
Parameter
Ambient Temperature under Bias
Storage Temperature
Voltage on any Pin Relative to V
SS
Supply Voltage Relative to V
SS
Short Circuit Output Current
Power Dissipation
Rating
0 ~ 70
-55 ~ 125
-0.5 ~ Vcc+0.5(<=4.6V(MAX))
-0.5 ~ 4.6
50
1.0
Unit
C
C
V
V
mA
W
Recommended DC Operating Conditions
(T
A
= 0 ~ 70C)
Symbol
V
CC
V
IH
V
IL
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Min
3.0
2.0
-0.3
Typ
3.3
-
-
Max
3.6
Vcc+0.3
0.8
Unit
V
V
V
Note: All voltage referred to Vss.
Rev 0.1 / Apr’01
GM71V16400C
DC Electrical Characteristics
(V
CC
= 3.3V+/-0.3V, Vss = 0V, T
A
= 0 ~ 70C)
Symbol
V
OH
V
OL
Output "L" Level Voltage (I
OUT
=
2
mA)
Parameter
Output Level
Output "H" Level Voltage (I
OUT
= -2mA
)
Min
2.4
0
50ns
60ns
70ns
-
-
-
-
50ns
-
-
-
-
-
-
-
Max
V
CC
0.4
90
80
70
2
90
80
70
80
70
60
Unit
V
V
Note
I
CC1
Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling
:
t
RC
=
t
RC
min)
Standby Current (TTL)
Power Supply Standby Current
,
D
High-Z)
Average Power Supply Current
RAS Only Refresh Mode
t =
min)
Fast Page Mode Current
Fast Page Mode
(
PC
= t
PC
min)
mA
I
CC2
mA
I
60ns
70ns
50ns
60ns
70ns
mA
2
1, 3
I
CC5
Power Supply Standby Current
(RAS, CAS >= V
CC
- 0.2V, D
OUT
= High-Z)
mA
100
90
mA
70
uA
4
-
ns
60
70ns
-
-
I
CC6
CAS-before-RAS Refresh Current
t =
min)
Battery Backup Operating Current(Standby with CBR Refresh)
(CBR refresh, t
RC
= 31.3us
,
t
RAS
<=
0.3
us,
D
OUT
=
High-Z, CMOS interface)
-
uA
I
Standby Current RAS = V
IH
CAS = V
IL
D
OUT
=
Enable
Self-Refresh Mode Current
(RAS, CAS<=0.2V
,
=
High-Z, CMOS interface)
L(I)
5
1
200
-10
10
10
uA
uA
uA
Input Leakage Current
Any Input (0V
<=
V
IN
<=
4.6V)
(D
is Disabled, 0V
<=
<= 4.
6V)
I
L(O)
Note: 1. I
I
2. Address can be changed once or less while RAS = V
3. Address can be changed once or less while CAS = V
4. L - Version.
’01
GM71V16400C
GM71VS16400CL
Capacitance
(V
CC
= 3.3V+/-0.3V, T
A
= 25C)
Symbol
C
I1
C
I2
C
I/O
Parameter
Input Capacitance (Address)
Input Capacitance (Clocks)
Output Capacitance (Data-In/Out)
Min
-
-
-
Max
5
7
7
Unit
pF
pF
pF
Note
1
1
1, 2
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = V
IH
to disable D
OUT
.
AC Characteristics
(V
CC
= 3.3V+/-0.3V, Vss=0V, T
A
= 0 ~ 70C, Notes 1, 2, 3,19,20)
Test Conditions
Input rise and fall times : 2ns
Input timing reference levels : 0.8V, 2.0V
Output timing reference levels : 0.8V, 2.0V
Output load : 1 TTL gate + C
L
(100pF)
(Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles
(Common Parameters)
Symbol
Parameter
Random Read or Write Cycle Time
RAS Precharge Time
CAS Precharge Time
RAS Pulse Width
CAS Pulse Width
Row Address Set up Time
Row Address Hold Time
Column Address Set-up Time
Column Address Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
RAS Hold Time
CAS Hold Time
CAS to RAS Precharge Time
OE to D
IN
Delay Time
OE Delay Time from D
IN
CAS Delay Time from D
IN
Transition Time (Rise and Fall)
GM71V(S)16400 GM71V(S)16400 GM71V(S)16400
C/CL-6
C/CL-7
C/CL-5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
Min Max Min Max Min Max
t
RC
t
RP
t
CP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
ODD
t
DZO
t
DZC
t
T
90
30
8
-
-
-
110
40
10
-
-
-
130
50
10
-
-
-
50
10,000
13
10,000
0
8
0
8
18
13
13
50
5
13
0
0
3
-
-
-
-
45
30
-
-
-
-
-
-
50
60
10,000
15
10,000
0
10
0
10
20
15
15
60
5
15
0
0
3
-
-
-
-
45
30
-
-
-
-
-
-
50
70
10,000
18
10,000
0
10
0
15
20
15
18
70
5
18
0
0
3
-
-
-
-
52
35
-
-
-
-
-
-
50
4
5
6
7
7
8
Rev 0.1 / Apr’01
GM71V16400C
Read Cycle
Symbol
GM71V(S)16400 GM71V(S)16400 GM71V(S)16400
C/CL-5
C/CL-6
C/CL-7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
9,10,21
10,11,
18,21
10,12,
18,21
10
Min Max Min Max Min
t
RAC
t
CAC
t
AA
t
OAC
t
RCS
t
RCH
t
RRH
t
RAL
t
CAL
t
CLZ
t
OH
t
OHO
t
OEZ
t
OFF
t
CDD
Access Time from RAS
Access Time from CAS
Access Time from Address
Access Time from OE
Read Command Setup Time
Read Command Hold Time to CAS
Read Command Hold Time to RAS
Column Address to RAS Lead Time
Column Address to CAS Lead Time
CAS to Output in low-Z
Output Data Hold Time
Output Data Hold Time from OE
Output Buffer Turn-off Time to OE
Output Buffer Turn-off Time
CAS to D
IN
Delay Time
-
-
-
-
0
0
5
25
25
0
3
3
-
-
13
50
13
25
13
-
-
-
-
-
-
-
-
13
13
-
-
-
-
-
0
0
5
30
30
0
3
3
-
-
15
60
15
30
15
-
-
-
-
-
-
-
-
15
15
-
-
-
-
-
0
0
5
35
35
0
3
3
-
-
18
70
18
35
18
-
-
-
-
-
-
-
-
15
15
-
13
13
14
14
6
Write Cycle
Symbol
Parameter
Write Command Setup Time
Write Command Hold Time
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data-in Setup Time
Data-in Hold Time
GM71V(S)16400 GM71V(S)16400 GM71V(S)16400
C/CL-5
C/CL-6
C/CL-7
Unit
ns
ns
ns
ns
ns
ns
ns
Note
15
Min Max Min Max Min Max
t
WCS
t
WCH
0
8
8
13
13
0
8
-
-
-
-
-
-
-
0
10
10
15
15
0
10
-
-
-
-
-
-
-
0
15
10
18
18
0
15
-
-
-
-
-
-
-
t
WP
t
RWL
t
CWL
t
DS
t
DH
16
16
Rev 0.1 / Apr’
Embedded System
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