DT285N12KOF datasheet, PDF - EEWORLD Datasheet

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DT285N12KOF: DescriptionSilicon Controlled Rectifier; CategoryAnalog mixed-signal IC Trigger device; File Size416KB，13 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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DT285N12KOF Overview

Silicon Controlled Rectifier

DT285N12KOF Parametric

Parameter Name	Attribute value
Maker	Infineon
package instruction	,
Reach Compliance Code	compliant
ECCN code	EAR99
Trigger device type	SCR

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Netz-Thyristor-Modul

Phase Control Thyristor Module

Datenblatt / Data sheet

TT285N

Kenndaten

TD285N

DT285N

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T

= -40°C... T

vj max

repetitive peak forward off-state and reverse voltages

Vorwärts-Stoßspitzensperrspannung

non-repetitive peak forward off-state voltage

Rückwärts-Stoßspitzensperrspannung

non-repetitive peak reverse voltage

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Stoßstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Kritische Stromsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

= 92°C

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

DIN IEC 747-6

f = 50 Hz, i

= 1 A, di

/dt = 1 A/µs

= T

vj max

, v

= 0,67 V

DRM

6.Kennbuchstabe / 6

letter F

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Zündstrom

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

Zündverzug

gate controlled delay time

= -40°C... T

vj max

= +25°C... T

vj max

Elektrische Eigenschaften

DRM

RRM

1200

DSM

RSM

TRMSM

TAVM

TSM

I²t

(di

/dt)

(dv

/dt)

1200

1300

1400 V

1600 V

1400 V

1600 V

1500 V

1700 V

450 A

285 A

9100 A

8000 A

414000 A²s

320000 A²s

250 A/µs

1000 V/µs

= T

vj max

, i

= 800 A

= T

vj max

= T

vj max

= 25°C, v

= 6 V

= 25°C, v

= 6 V

= T

vj max

, v

= 6 V

= T

vj max

, v

= 0,5 V

DRM

= T

vj max

, v

= 0,5 V

DRM

= 25°C, v

= 6 V, R

= 5

Ω

(TO)

max.

1,48 V

0,8 V

0,65 mΩ

max.

200 mA

2 V

10 mA

5 mA

0,2 V

300 mA

1200 mA

70 mA

3 µs

= 25°C, v

= 6 V, R

≥

Ω

= 1 A, di

/dt = 1 A/µs, t

= 20 µs

= T

vj max

= V

DRM

, v

= V

RRM

DIN IEC 747-6

= 25 °C,i

= 1 A, di

/dt = 1 A/µs

, i

prepared by: C.Drilling

approved by: J. Novotny

date of publication:

revision:

24.09.02

BIP AC / SDB-MA/19.08.96 A.Rüther

A 126/96

Seite/page

1/12

DT285N12KOF Related Products

	DT285N12KOF	TT285N14KOFHOSA1	DT285N16KOF	DT285N14KOF
Description	Silicon Controlled Rectifier	Silicon Controlled Rectifier, 450A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 2 Element, MODULE-7	Silicon Controlled Rectifier	Silicon Controlled Rectifier, 450A I(T)RMS, 285000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, MODULE-5
Reach Compliance Code	compliant	compliant	compliant	unknown
Trigger device type	SCR	SCR	SCR	SCR
Maker	Infineon	-	Infineon	Infineon

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