BYD47-20
Fast soft-recovery rectifier
Rev. 04 — 4 February 2005
Product data sheet
1. Product profile
1.1 General description
Cavity free cylindrical glass SOD87 package through Implotec™ technology. This
package is hermetically sealed and fatigue free as coefficients of expansion of all used
parts are matched.
1.2 Features
s
s
s
s
s
s
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Shipped in 8 mm embossed tape
Smallest surface mount rectifier outline
2. Pinning information
Table 1:
Pin
1
2
Pinning
Description
cathode (K)
anode (A)
[1]
Simplified outline
Symbol
k
a
sym006
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 2:
Ordering information
Package
Name
BYD47-20
-
Description
hermetically sealed glass surface mounted package;
Implotec™ technology; 2 connectors
Version
SOD87
Type number
Philips Semiconductors
BYD47-20
Fast soft-recovery rectifier
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RSM
V
RRM
I
F(AV)
Parameter
non-repetitive peak reverse voltage
repetitive peak reverse voltage
average forward current
T
tp
= 105
°C;
see
Figure 1;
averaged over any 20 ms period;
see also
Figure 5
T
amb
= 25
°C;
printed-circuit board
mounting (see
Figure 13);
see
Figure 2;
averaged over any 20 ms period;
see also
Figure 5
I
FRM
I
FSM
T
stg
T
j
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
see
Figure 6
T
tp
= 85
°C;
see
Figure 3
T
amb
= 65
°C;
see
Figure 4
t = 10 ms half sine wave; T
j
= T
j(max)
prior to surge; V
R
= V
RRMmax
Conditions
Min
-
-
-
Max
2100
2000
0.80
Unit
V
V
A
-
0.34
A
-
-
-
−65
−65
8.0
2.8
10
+175
+175
A
A
A
°C
°C
5. Thermal characteristics
Table 4:
Symbol
R
th(j-tp)
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
[1]
Conditions
Typ
30
150
Unit
K/W
K/W
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥
40
µm,
see
Figure 13.
6. Characteristics
Table 5:
Characteristics
T
j
= 25
°
C; unless otherwise stated.
Symbol
V
F
I
R
t
rr
C
d
dI
R
--------
dt
Parameter
forward voltage
reverse current
reverse recovery time
diode capacitance
maximum slope of reverse
recovery current
Conditions
I
F
= 1 A; T
j
= T
j(max)
; see
Figure 7
I
F
= 1 A; see
Figure 7
V
R
= V
RRMmax
; see
Figure 8
V
R
= V
RRMmax
; T
j
= 125
°C;
see
Figure 8
when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see
Figure 10
f = 1 MHz; V
R
= 0 V; see
Figure 9
when switched from I
F
= 1 A to V
R
≥
30 V
and dI
F
/dt =
−1
A/µs; see
Figure 11
Min
-
-
-
-
-
-
-
Typ
-
-
-
-
-
15
-
Max
2.05
2.40
5
50
300
-
5
Unit
V
V
µA
µA
ns
pF
A/µs
9397 750 14417
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 4 February 2005
2 of 10
Philips Semiconductors
BYD47-20
Fast soft-recovery rectifier
1.6
mlc194
0.4
I
F(AV)
(A)
0.3
mlc195
I
F(AV)
(A)
1.2
0.8
0.2
0.4
0.1
0
0
100
T
tp
(°C)
200
0
0
100
T
amb
(°C)
200
a = I
F(RMS)
/I
F(AV)
= 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
a = I
F(RMS)
/I
F(AV)
= 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in
Figure 13.
Switched mode application.
Fig 1. Maximum permissible average forward current
as a function of tie-point temperature (including
losses due to reverse leakage)
10
I
FRM
(A)
8
δ
= 0.05
6
0.1
Fig 2. Maximum permissible average forward current
as a function of ambient temperature (including
losses due to reverse leakage)
mlc198
P
δ
=
t
p
T
t
p
T
t
4
0.2
0.5
1
2
0
10
−2
10
−1
1
10
10
2
10
3
t
p
(ms)
10
4
T
tp
= 85
°C;
R
th(j-tp)
= 30 K/W.
V
RRMmax
during 1
− δ;
curves include derating for T
j(max)
at V
RRM
= 2000 V.
Fig 3. Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor
9397 750 14417
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 4 February 2005
3 of 10
Philips Semiconductors
BYD47-20
Fast soft-recovery rectifier
3
I
FRM
(A)
2
t
p
0.1
mlc199
P
δ
= 0.05
δ
=
t
p
T
t
T
0.2
1
0.5
1
0
10
−2
10
−1
1
10
10
2
10
3
t
p
(ms)
10
4
T
amb
= 65
°C;
R
th(j-a)
= 150 K/W.
V
RRMmax
during 1
− δ;
curves include derating for T
j(max)
at V
RRM
= 2000 V.
Fig 4. Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor
mlc193
mlc197
3
P
(W)
2
a = 3 2.5 2
1.57
200
T
j
(
°
C)
1.42
100
1
0
0
0
0.4
I
F(AV)
(A)
0.8
0
1000
V
R
(V)
2000
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Solid line: V
RRM
;
δ
= 0.5.
Dotted line: V
RRM
;
δ
= 0.1.
Fig 5. Maximum steady state power dissipation
(forward plus leakage current losses, excluding
switching losses) as a function of average
forward current
Fig 6. Maximum permissible junction temperature as
a function of reverse voltage
9397 750 14417
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 4 February 2005
4 of 10
Philips Semiconductors
BYD47-20
Fast soft-recovery rectifier
3
I
F
(A)
mlc192
10
3
I
R
(µA)
10
2
mlc319
2
1
(1)
(2)
10
0
1
0
2
V
F
(V)
4
0
100
T
j
(°C)
200
(1) T
j
= 175
°C.
(2) T
j
= 25
°C.
V
R
= V
RRMmax
.
Fig 7. Forward current as a function of forward
voltage; maximum values
Fig 8. Reverse current as a function of junction
temperature; maximum values
mlc317
10
C
d
(pF)
1
1
10
10
2
V
R
(V)
10
3
f = 1 MHz; T
j
= 25
°C.
Fig 9. Diode capacitance as a function of reverse voltage; typical values
9397 750 14417
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 4 February 2005
5 of 10
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