BD941F datasheet, PDF - EEWORLD Datasheet

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BD941F: DescriptionPower Bipolar Transistor, 3A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-186, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size313KB，7 Pages; ManufacturerYAGEO; Websitehttp://www.yageo.com/

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BD941F Overview

Power Bipolar Transistor, 3A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-186, 3 PIN

BD941F Parametric

Parameter Name	Attribute value
Maker	YAGEO
Parts packaging code	SOT
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Manufacturer packaging code	SOT186
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	3 MHz

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BD941F Related Products

	BD941F	BD933F	BD935F	BD937F	BD939F
Description	Power Bipolar Transistor, 3A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-186, 3 PIN	Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-186, 3 PIN	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-186, 3 PIN	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-186, 3 PIN	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-186, 3 PIN
Maker	YAGEO	YAGEO	YAGEO	YAGEO	YAGEO
Parts packaging code	SOT	SOT	SOT	SOT	SOT
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3	3	3
Manufacturer packaging code	SOT186	SOT186	SOT186	SOT186	SOT186
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	3 A	3 A	3 A	3 A	3 A
Collector-emitter maximum voltage	120 V	45 V	60 V	80 V	100 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	25	25	25	25	25
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
surface mount	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	3 MHz	3 MHz	3 MHz	3 MHz	3 MHz

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