2SA673, 2SA673A
Silicon PNP Epitaxial
ADE-208-125 (Z)
1st. Edition
Mar. 2001
Application
•
Low frequency amplifier
•
Complementary pair with 2SC1213 and 2SC1213A
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA673, 2SA673A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
2SA673
–35
–35
–4
–500
400
150
–55 to +150
2SA673A
–50
–50
–4
–500
400
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SA673
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Collector to emitter
saturation voltage
DC current trnsfer ratio
DC current trnsfer ratio
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
V
CE(sat)
h
FE
*
1
h
FE
Min
–35
–35
–4
—
—
60
10
—
Typ
—
—
—
—
–0.2
—
—
Max
—
—
—
–0.5
–0.6
320
—
2SA673A
Min
–50
–50
–4
—
—
60
10
—
Typ
—
—
—
—
–0.2
—
—
Max
—
—
—
–0.5
–0.6
320
—
V
Unit
V
V
V
µA
V
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –20 V, I
E
= 0
I
C
= –150 mA,
I
B
= –15 mA*
2
V
CE
= –3 V,
I
C
= –10 mA
V
CE
= –3 V,
I
C
= –500 mA*
2
V
CE
= –3 V,
I
C
=–10 mA
Base to emitter voltage V
BE
–0.64 —
–0.64 —
Notes: 1. The 2SA673 and 2SA673A are grouped by h
FE
as follows.
2. Pulse test
B
60 to 120
C
100 to 200
D
160 to 320
2
2SA673, 2SA673A
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
600
Typical Output Characteristics (1)
–100
0
–1.
–0.9
–0.8
P
C
Collector Current I
C
(mA)
–80
=
–0.7
–0.6
40
0
W
m
400
–60
–0.5
–40
–0.4
–0.3
200
–20
–0.2
–0.1 mA
I
B
= 0
0
100
150
50
Ambient Temperature Ta (°C)
0
–2
–4
–6
–8
–10
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics (2)
–500
Collector Current I
C
(mA)
Collector Current I
C
(mA)
–7
–6
–5
–4
–3
–2
–1 mA
–100
I
B
= 0
0
–2
–4
–6
–8
–10
Collector to Emitter Voltage V
CE
(V)
–30
Typical Transfer Characteristics
V
CE
= –3 V
–400
–10
–300
–3
–200
–1.0
P
C
= 400 mW
–0.3
0
–0.2 –0.4 –0.6 –0.8 –1.0
Base to Emitter Voltage V
BE
(V)
Ta = 75
°
C
25
–25
3
2SA673, 2SA673A
DC Current Transfer Ratio vs.
Collector Current
150
Gain Bandwidth Product f
T
(MHz)
DC Current Transfer ratio h
FE
V
CE
= –3 V
75
Gain Bandwidth Product vs.
Collector Current
240
200
160
120
80
40
0
–5
V
CE
= –3 V
100
50
25
0
–
a=
C
25
°
50
T
0
–2
–5 –10 –20
–50 –100 –200
Collector Current I
C
(mA)
–500
–10 –20
–50 –100 –200
Collector Current I
C
(mA)
–500
4
2SA673, 2SA673A
Package Dimensions
As of January, 2001
Unit: mm
4.8
±
0.4
3.8
±
0.4
2.3 Max
0.55Max
0.7
0.60 Max
12.7 Min
5.0
±
0.2
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
5
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