2SJ468 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2SJ468

2SJ468: DescriptionPower Field-Effect Transistor, 4A I(D), 30V, 0.17ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, 1.60 MM HEIGHT, SOP-8; CategoryDiscrete semiconductor The transistor; File Size162KB，1 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

Download Datasheet Parametric Compare View All

2SJ468 Overview

Power Field-Effect Transistor, 4A I(D), 30V, 0.17ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, 1.60 MM HEIGHT, SOP-8

2SJ468 Parametric

Parameter Name	Attribute value
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	Single
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	4 A
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	0.17 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of terminals	8
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

Preview

Download Datasheet

View All

2SJ468 Related Products

	2SJ468	2SK2556	2SJ469	2SK2442	FW201	FW101	FW102	2SK2557
Description	Power Field-Effect Transistor, 4A I(D), 30V, 0.17ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, 1.60 MM HEIGHT, SOP-8	Power Field-Effect Transistor, 6A I(D), 30V, 0.078ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 5A I(D), 30V, 0.16ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, 1.60 MM HEIGHT, SOP-8	Power Field-Effect Transistor, 7A I(D), 30V, 0.048ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 5A I(D), 20V, 0.78ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 3A I(D), 12V, 0.165ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 3A I(D), 20V, 0.18ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 7A I(D), 30V, 0.06ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknow	unknow	unknown	unknown	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum drain-source breakdown voltage	30 V	30 V	30 V	30 V	20 V	12 V	20 V	30 V
Maximum drain current (ID)	4 A	6 A	5 A	7 A	5 A	3 A	3 A	7 A
Maximum drain-source on-resistance	0.17 Ω	0.078 Ω	0.16 Ω	0.048 Ω	0.78 Ω	0.165 Ω	0.18 Ω	0.06 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
Number of terminals	8	8	8	8	8	8	8	8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	P-CHANNEL	N-CHANNEL	P-CHANNEL	N-CHANNEL	N-CHANNEL	P-CHANNEL	P-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Configuration	Single	Single	SINGLE	Single	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	-
Maximum drain current (Abs) (ID)	4 A	6 A	5 A	7 A	5 A	-	3 A	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	-
Maximum power dissipation(Abs)	2 W	2 W	2 W	2 W	2 W	2 W	2 W	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	-	SWITCHING
Operating mode	-	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE

Recommended Resources

TDA2040 20W HI-FI audio power amplifier circuit diagram

Tutorial on voice control switch circuit d

Clam E70E-2, E100-2 computerized microwave oven circuit diagram

ICL7660 application example circuit negative voltage converter circuit diagram

Micro strain sensor signal conditioning circuit

Telephone intercom circuit

Convert the remote controller PWM signal into target attitude (quadcopter): [i=s]This post was last edited by liufengjing9 on 2017-4-29 14:59[/i] Hello everyone, my question is: [b]How to process the remote control PWM signal and convert it into the target attitude (quadcopte...; liufengjing9 stm32/stm8

Questions about the two array forms of LSM6DSO FSM gesture recognition?: I'd like to ask you, I'm new to LSM6DSO's FSM, and I wanted to recognize the shake gesture, but I couldn't find the shake gesture array in lsm6dso_fsm.c, and it was in this form: /* Program: glance */...; kinggate1 MEMS sensors

[Special topic] A big discussion on anti-interference of single-chip microcomputers: [url=https://www.eeworld.com.cn/zhuanti/20091103mcu/20091103mcu.html]https://www.eeworld.com.cn/zhuanti/20091103mcu/20091103mcu.html[/url] Welcome to join the discussion~~...; soso MCU

Embedded technology enthusiasts' study notes series (Part 2): Embedded enthusiasts' learning notes series (Part 2) After deciding to start learning embedded systems, the first thing to do is to get familiar with ARM instructions and their pseudo-instructions and...; songtl Embedded System

Power PCB5.0.1: In power pcb5.0.1, I use the copper pouer command to draw two rectangular boxes, one of which is inside the other. How can I make the copper inside the inner rectangle instead of between them? Experts...; qianrj Embedded System

DXP automatic annotation error: I use DXP schematics to automatically mark the acess viodation at 0000019c. No matter how I solve it, it doesn't work. Please help....; hongyuchang PCB Design

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components