2SJ469 datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2SJ469

Preview

2SJ469: DescriptionPower Field-Effect Transistor, 5A I(D), 30V, 0.16ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, 1.60 MM HEIGHT, SOP-8; CategoryDiscrete semiconductor The transistor; File Size162KB，1 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

Download Datasheet Parametric Compare View All

2SJ469 Overview

Power Field-Effect Transistor, 5A I(D), 30V, 0.16ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, 1.60 MM HEIGHT, SOP-8

2SJ469 Parametric

Parameter Name	Attribute value
Objectid	1449020061
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	5 A
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	0.16 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	1
Number of terminals	8
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

Preview

Download Datasheet

View All

2SJ469 Related Products

	2SJ469	2SK2556	2SJ468	2SK2442	FW201	FW101	FW102	2SK2557
Description	Power Field-Effect Transistor, 5A I(D), 30V, 0.16ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, 1.60 MM HEIGHT, SOP-8	Power Field-Effect Transistor, 6A I(D), 30V, 0.078ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 4A I(D), 30V, 0.17ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, 1.60 MM HEIGHT, SOP-8	Power Field-Effect Transistor, 7A I(D), 30V, 0.048ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 5A I(D), 20V, 0.78ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 3A I(D), 12V, 0.165ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 3A I(D), 20V, 0.18ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 7A I(D), 30V, 0.06ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknown	unknow	unknow	unknown	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum drain-source breakdown voltage	30 V	30 V	30 V	30 V	20 V	12 V	20 V	30 V
Maximum drain current (ID)	5 A	6 A	4 A	7 A	5 A	3 A	3 A	7 A
Maximum drain-source on-resistance	0.16 Ω	0.078 Ω	0.17 Ω	0.048 Ω	0.78 Ω	0.165 Ω	0.18 Ω	0.06 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
Number of terminals	8	8	8	8	8	8	8	8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	P-CHANNEL	N-CHANNEL	P-CHANNEL	N-CHANNEL	N-CHANNEL	P-CHANNEL	P-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Configuration	SINGLE	Single	Single	Single	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	-
Maximum drain current (Abs) (ID)	5 A	6 A	4 A	7 A	5 A	-	3 A	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	-
Maximum power dissipation(Abs)	2 W	2 W	2 W	2 W	2 W	2 W	2 W	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	-	SWITCHING
Operating mode	-	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE

Recommended Resources

Computer host automatic temperature control circuit

Inclinometer direction detection circuit diagram

COR (carrier operated relay) connection circuit

Imitation SRS processor circuit

MAX712 application circuit (charging circuit)

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components