SEMICONDUCTOR
TECHNICAL DATA
FEATURE
・Low
Collector-Emitter Saturation Voltage V
CE(sat)
.
・High
Collector Current Capability : I
C
and I
CP
.
・Higher
Efficiency Leading to Less Heat Generation.
L
KTC3571S
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
L
A
G
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation**
Junction Temperature
Storage Temperature Range
DC
Pulse
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
120
100
5
1
3
300
350
150
-55½150
UNIT
V
V
V
2
3
1
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
C
N
H
mA
mW
℃
℃
1. EMITTER
2. BASE
3. COLLECTOR
Note : * Package Mounted on 99.5% Alumina 10×8×0.6mm.
K
A
M
SOT-23
MARKING
Lot No.
Type Name
KMB
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage **
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
(1)
Collector-Emitter Saturation Voltage **
V
CE(sat)
(2)
V
CE(sat)
(3)
Base-Emitter Saturation Voltage **
Base-Emitter Voltag
V
BE(sat)
V
BE
h
FE
(1)
DC Current Gain **
h
FE
(2)
h
FE
(3)
h
FE
(4)
Transition Frequency
Collector Output Capacitance
** Pulse Width = 300μ Duty Cycle≤2%.
S,
f
T
C
ob
TEST CONDITION
I
C
=100μ
A
I
C
=1mA
I
E
=100μ
A
V
CB
=80V
V
EB
=4V, I
C
=0A
V
CES
=80V, V
BE
=0V
I
C
=100mA, I
B
=10mA
I
C
=500mA, I
B
=50mA
I
C
=1A, I
B
=100mA
I
C
=1A, I
B
=100mA
V
CE
=10V, I
C
=1A
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=250mA
V
CE
=10V, I
C
=500mA
V
CE
=10V, I
C
=1A
V
CE
=10V, I
C
=50mA, f=100MHz
V
CB
=10V, f=1MHz
MIN.
120
100
5
-
-
-
-
-
-
-
-
150
150
100
80
100
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
9.5
MAX.
-
-
-
100
100
100
0.04
0.12
0.2
1.05
0.9
-
500
-
-
-
-
MHz
pF
V
V
V
UNIT
V
V
V
nA
nA
nA
2010. 2. 24
Revision No : 4
J
D
1/3
KTC3571S
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
1
I
C
/I
B
=10
V
CE(sat)
- I
C
10
I
C
/I
B
=50
Ta=25 C
Ta=100 C
1
10
-1
Ta=25 C
Ta=-55 C
10
-1
10
-2
10
-1
1
10
10
2
10
3
10
4
10
-2
10
-1
1
10
10
2
10
3
10
4
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
V
BE
- I
C
BASE-EMITTER VOLTAGE V
BE
(V)
1.2
V
CE
=10V
h
FE
- I
C
600
DC CURRENT GAIN h
FE
V
CE
=10V
0.8
Ta=-55 C
Ta=25 C
400
Ta=100 C
Ta=25 C
0.4
Ta=100 C
200
Ta=-55 C
0
10
-1
1
10
10
2
10
3
10
4
0
10
-1
1
10
10
2
10
3
10
4
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
V
BE(sat)
- I
C
10
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
I
C
/I
B
=20
Ta=25 C
I
C
- V
CE
I
B
=3150µA I
B
=3500µA
I
B
=2800µA
I
B
=2450µA
1.6
Ta=25 C
2
COLLECTOR CURRENT I
C
(A)
1.2
0.8
0.4
0
I
B
=2100µA
I
B
=1750µA
I
B
=1400µA
I
B
=1050µA
I
B
=700µA
I
B
=350µA
1
10
-1
10
-1
1
10
10
2
10
3
10
4
0
1
2
3
4
5
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2010. 2. 24
Revision No : 4
2/3
KTC3571S
SAFE OPERATING AREA
COLLECTOR CURRENT I
C
(mA)
10000
I
C
MAX(PULSE)*
1000
100mS
10mS*
1mS*
I
C
MAX(CONTINUOUS)
100
DC OPERATION(Ta=25 C)
10
*SINGLE NONREPETTTTVE PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN TEMPERATURE
1
0.1
1
10
100
1000
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2010. 2. 24
Revision No : 4
3/3
Analogue and Mixed Signal
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