SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION
FEATURES
・High
Voltage : V
CEO
=160V.
・Large
Continuous Collector Current Capability.
・Recommended
for LED Drive Application.
A
H
KTC4380
EPITAXIAL PLANAR NPN TRANSISTOR
C
G
D
K
F
F
D
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* : Mounted on ceramic substrate
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
*
T
j
T
stg
(250mm
2
×
0.8t)
RATING
160
160
6
1
0.5
0.5
W
1
150
-55½150
℃
℃
UNIT
1
2
3
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
_
2.50 + 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
_
1.50 + 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
V
V
V
A
A
Marking
h
FE
Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(Note)
TEST CONDITION
V
CB
=160V, I
E
=0
V
EB
=6V, I
C
=0
I
C
=10mA, I
B
=0
V
CE
=5V, I
C
=200mA
I
C
=100mA, I
B
=10mA
I
C
=500mA, I
B
=50mA
I
C
=120mA, I
B
=2mA
V
CE
=5V, I
C
=5mA
V
CE
=5V, I
C
=200mA
V
CB
=10V, I
E
=0, f=1MHz
MIN.
-
-
160
160
-
-
-
0.45
-
-
G2
TYP.
-
-
-
-
0.05
-
0.13
-
100
15
MAX.
1.0
1.0
-
320
0.1
1.5
-
0.75
-
-
J
B
E
SOT-89
UNIT
μ
A
μ
A
V
-
V
V
V
V
MHz
pF
V
CE(sat)(1)
Collector-Emitter Saturation Voltage
V
CE(sat)(2)
V
CE(sat)(3)
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
V
BE
f
T
C
ob
2010. 7. 13
Revision No : 3
1/3
KTC4380
I
C
- V
CE
1.0
COLLECTOR CURRENT I
C
(A)
0.8
0.6
0.4
0.2
0
15
I
C
- V
BE
COLLECTOR CURRENT I
C
(A)
COMMON
10
1.0
0.8
0.6
0.4
0.2
0
C
Ta=25
C
Ta=0 C
6
4
3
2.5
2
1.5
1
I
B
=0.5mA
0
COMMON
EMITTER
V
CE
=5V
EMITTER
Ta=25 C
0
4
8
12
16
20
24
28
0
0.2
0.4
Ta=1
00
0.6
0.8
1.0
1.2
1.4
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
BASE-EMITTER VOLTAGE V
BE
(V)
h
FE
- I
C
500
DC CURRENT GAIN h
FE
Ta=25 C
h
FE
- I
C
500
300
Ta=100 C
Ta=25 C
Ta=0 C
DC CURRENT GAIN h
FE
300
COMMON EMITTER
10
100
50
100
50
5
V
C
E
V
=2
COMMON EMITTER
V
CE
=10V
V
CE
=5V
20
10
30
50
100
300
1k
20
10
30
50
100
300
1k
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
0.3
COMMON EMITTER
Ta=25 C
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
0.5
0.3
COMMON EMITTER
I
C
/I
B
=10
0.5
0.1
0.05
0.03
I
C
/I
B
=10
I
C
/I
B
=5
0.1
0.05
0.03
Ta=100 C
Ta=25 C
Ta=0 C
0.01
0.01
5
10
30
100
300
1k
COLLECTOR CURRENT I
C
(mA)
5
10
30
100
300
1k
COLLECTOR CURRENT I
C
(mA)
2010. 7. 13
Revision No :3
2/3
KTC4380
COLLECTOR OUTPUT CAPACITANCE C
ob
(pF)
f
T
- I
C
TRANSITION FREQUENCY f
T
(MHz)
500
300
COMMON EMITTER
Ta=25 C
V
CE
=5V
V
CE
=2V
C
ob
- V
CB
100
50
30
COMMON EMITTER
f=1MHz
Ta=25 C
100
50
30
10
5
10
2
5
10
30
100
400
2
1
3
5
10
30
50
100
200
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-BASE VOLTAGE V
CB
(V)
3k
COLLECTOR CURRENT I
C
(mA)
1k
500
300
100
50
30
10
5
3
1
COLLECTOR POWER DISSIPATION P
C
(W)
SAFE OPERATING AREA
I
C
MAX(PULSE)
I
C
MAX(CONTI-
NUOUS)
*
P
C
- Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
2
1
1
MOUNTED ON CERAMIC
10
m
S
DC
OP
ER
*
10
0m
S
SUBSTRATE
(250mm
2
x0.8t)
2
Ta=25 C
S *
1m
AT
*
IO
N
* SINGLE NONREPETITIVE
PULSE
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE Ta ( C)
30
100
300
0.3
1
3
10
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2010. 7. 13
Revision No : 3
3/3
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