KTC4380 datasheet, PDF - EEWORLD Datasheet

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KTC4380: DescriptionEPITAXIAL PLANAR NPN TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size56KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTC4380 Overview

EPITAXIAL PLANAR NPN TRANSISTOR

KTC4380 Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	160 V
Configuration	SINGLE
Minimum DC current gain (hFE)	160
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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SEMICONDUCTOR

TECHNICAL DATA

HIGH VOLTAGE APPLICATION

FEATURES

・High

Voltage : V

CEO

=160V.

・Large

Continuous Collector Current Capability.

・Recommended

for LED Drive Application.

A

H

KTC4380

EPITAXIAL PLANAR NPN TRANSISTOR

C

G

D

K

F

D

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

* : Mounted on ceramic substrate

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

B

P

C

P

C

*

T

j

T

stg

(250mm

2

×

0.8t)

RATING

160

6

1

0.5

W

1

150

-55½150

℃

UNIT

1

2

3

DIM

A

B

C

D

E

F

G

H

J

K

MILLIMETERS

4.70 MAX

_

2.50 + 0.20

1.70 MAX

0.45+0.15/-0.10

4.25 MAX

_

1.50 + 0.10

0.40 TYP

1.75 MAX

0.75 MIN

0.5+0.10/-0.05

V

A

Marking

h

FE

Rank

Lot No.

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

DC Current Gain

SYMBOL

I

CBO

I

EBO

V

(BR)CEO

h

FE

(Note)

TEST CONDITION

V

CB

=160V, I

E

=0

V

EB

=6V, I

C

=0

I

C

=10mA, I

B

=0

V

CE

=5V, I

C

=200mA

I

C

=100mA, I

B

=10mA

I

C

=500mA, I

B

=50mA

I

C

=120mA, I

B

=2mA

V

CE

=5V, I

C

=5mA

V

CE

=5V, I

C

=200mA

V

CB

=10V, I

E

=0, f=1MHz

MIN.

-

160

-

0.45

-

G2

TYP.

-

0.05

-

0.13

-

100

15

MAX.

1.0

-

320

0.1

1.5

-

0.75

-

J

B

E

SOT-89

UNIT

μ

A

μ

A

V

-

V

MHz

pF

V

CE(sat)(1)

Collector-Emitter Saturation Voltage

V

CE(sat)(2)

V

CE(sat)(3)

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

V

BE

f

T

C

ob

2010. 7. 13

Revision No : 3

1/3

KTC4380 Related Products

	KTC4380	KTC4380_1
Description	EPITAXIAL PLANAR NPN TRANSISTOR	EPITAXIAL PLANAR NPN TRANSISTOR

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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