KTC9014A datasheet, PDF - EEWORLD Datasheet

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KTC9014A: DescriptionEPITAXIAL PLANAR NPN TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size34KB，1 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTC9014A Overview

EPITAXIAL PLANAR NPN TRANSISTOR

KTC9014A Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-92
package instruction	TO-92, 3 PIN
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99

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SEMICONDUCTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

B

KTC9014A

EPITAXIAL PLANAR NPN TRANSISTOR

C

FEATURES

: h

FE

(I

C

=0.1mA)/h

FE

(I

C

=2mA)=0.95(Typ.).

・Low

Noise :NF=1dB(Typ.) at f=1kHz.

・Complementary

to KTC9015A.

K

D

G

N

E

A

・Excellent

h

FE

Linearity

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Emitter Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

E

P

C

T

j

T

stg

RATING

60

50

5

150

-150

400

150

-55½150

UNIT

V

L

F

H

F

V

mA

mW

℃

M

1

2

3

C

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

_

14.00 + 0.50

0.55 MAX

2.30

0.45 MAX

1.00

J

1. EMITTER

2. BASE

3. COLLECTOR

TO-92 (F)

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Noise Figure

Note : h

FE

Classification A:60½150,

SYMBOL

I

CBO

I

EBO

h

FE

(Note)

V

CE(sat)

f

T

C

ob

NF

B:100½300,

TEST CONDITION

V

CB

=50V, I

E

=0

V

EB

=5V, I

C

=0

V

CE

=5V, I

C

=1mA

I

C

=100mA, I

B

=10mA

V

CE

=10V, I

C

=1mA, f=100MHz

V

CB

=10V, I

E

=0, f=1MHz

V

CE

=6V, I

C

=0.1mA, Rg=10kΩ, f=1kHz

C:200½600,

D:400½1000

MIN.

-

60

-

60

-

TYP.

-

0.1

-

2.0

1.0

MAX.

50

100

1000

0.25

-

3.5

10

V

MHz

pF

dB

UNIT

nA

2010. 1. 28

Revision No : 2

1/1

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