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2SJ649

Description
20A, 60V, 0.075ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, ISOLATED, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size205KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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2SJ649 Overview

20A, 60V, 0.075ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, ISOLATED, TO-220, 3 PIN

2SJ649 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)40 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)20 A
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.075 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)25 W
Maximum pulsed drain current (IDM)70 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

2SJ649 Related Products

2SJ649 2SJ649(0)-AZ 2SJ649-S17-AY 2SJ649-AZ
Description 20A, 60V, 0.075ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, ISOLATED, TO-220, 3 PIN Pch Single Power MOSFET -60V -20A 48mohm MP-45F/TO-220 Pch Single Power MOSFET -60V -20A 48mohm MP-45F/TO-220 mosfet P-CH -60v -20a TO-220
Is it Rohs certified? incompatible conform to conform to conform to
Parts packaging code TO-220AB MP-45F MP-45F MP-45F
Contacts 3 3 3 3
Reach Compliance Code compli compli compli compli
Base Number Matches 1 1 1 1
Configuration SINGLE WITH BUILT-IN DIODE Single - Single
Maximum drain current (Abs) (ID) 20 A 20 A - 20 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
Maximum operating temperature 150 °C 150 °C - 150 °C
Polarity/channel type P-CHANNEL P-CHANNEL - P-CHANNEL
Maximum power dissipation(Abs) 25 W 25 W - 25 W
surface mount NO NO - NO
Brand Name - Renesas Renesas Renesas
Manufacturer packaging code - PRSS0003AK-A3 PRSS0003AK-A3 PRSS0003AK-A3
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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