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AP5521GM-HF_16

Description
Fast Switching Performance
File Size86KB,8 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
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AP5521GM-HF_16 Overview

Fast Switching Performance

AP5521GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Low Gate Charge
D1
D2
D1
D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
S2
G1
G2
100V
150mΩ
2.5A
-100V
160mΩ
-2.5A
Fast Switching Performance
RoHS Compliant & Halogen-Free
SO-8
S1
P-CH BV
DSS
R
DS(ON)
I
D
Description
AP5521 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
G1
D1
D2
G2
S1
S2
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
3
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
3
Rating
N-channel
100
+20
2.5
2.0
10
2
-55 to 150
-55 to 150
P-channel
-100
+20
-2.5
-2.0
-10
Units
V
V
A
A
A
W
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
1
201501092

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