MBM200JS12EW datasheet, PDF - EEWORLD Datasheet

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MBM200JS12EW: DescriptionInsulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES; CategoryDiscrete semiconductor The transistor; File Size343KB，5 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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MBM200JS12EW Overview

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES

MBM200JS12EW Parametric

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
package instruction	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknown
Maximum collector current (IC)	200 A
Collector-emitter maximum voltage	1200 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PUFM-X7
Number of components	1
Number of terminals	7
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum power dissipation(Abs)	1470 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
VCEsat-Max	3.4 V

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Status List

M:Mass

production

A:Abolition

GR - A Series (Advanced GR Series)

Absolute Maximum Ratings

Connection

Type

CES

(V)

MBN1200GR12A

Single

MBN600GR12A

MBN400GR12A

MBM300GR12A

MBM200GR12A

Dual

MBM150GR12A

MBM100GR12A

1,200

150

100

1,000

690

2.2

1,200

(A)

1,200

600

400

300

200

(W)

8,330

3,790

2,500

1,980

1,250

CE(sat)

(V)Typ.

2.4

2.2

Date:Mar.2002

KS02007

Characteristics

(µs)Max.

2.1

0.8

0.7

0.6

off

(µs)Max.

1.8

1.2

1.1

1.0

(µs)Max.

0.4

0.35

0.3

N-7

N-6

N-5

M- 9

M- 8

Outline

Status

GR Series

Absolute Maximum Ratings

Connection

Type

CES

(V)

MBM400GR6

MBM300GR6

Dual

MBM200GR6

MBM150GR6

600

200

150

690

520

2.1

0.7

0.8

0.3

M- 8

600

(A)

400

300

(W)

1,170

930

CE(sat)

(V)Typ.

2.1

Characteristics

(µs)Max.

0.7

off

(µs)Max.

1.1

1.0

(µs)Max.

0.32

M- 3

M- 8

Outline

Status

GS Series

Absolute Maximum Ratings

Connection

Type

CES

(V)

Dual

MBM600GS6CW

MBM400GS6AW

MBM400JS6AW

MBM300GS6AW

MBM200GS6AW

MBM150GS6AW

Six - Pack

MBB200GS6AW

600

(A)

600

400

300

200

150

200

(W)

1,700

1,000

1,470

800

600

450

600

CE(sat)

(V)Typ.

1.9

Characteristics

(µs)Max.

0.8

0.7

0.6

off

(µs)Max.

1.1

0.9

(µs)Max.

0.4

0.35

M- 7

M- 1

M- 3

M- 1

M- 6

B-1

Outline

Status

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