EEWORLDEEWORLDEEWORLD

Part Number

Search

CTB08-600BPT

Description
TRIAC, 600V V(DRM), 8A I(T)RMS, TO-220AB, TO-220AB, 3 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size202KB,2 Pages
ManufacturerCynergy 3
Environmental Compliance
Download Datasheet Parametric View All

CTB08-600BPT Overview

TRIAC, 600V V(DRM), 8A I(T)RMS, TO-220AB, TO-220AB, 3 PIN

CTB08-600BPT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCynergy 3
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Shell connectionMAIN TERMINAL 2
ConfigurationSINGLE
Critical rise rate of commutation voltage - minimum value10 V/us
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current25 mA
Maximum DC gate trigger voltage1.3 V
Maximum holding current25 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum leakage current0.005 mA
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current8 A
Off-state repetitive peak voltage600 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeTRIAC
CTA/CTB 08
8Amp - 400/600/800/1000V - TRIAC
Applications
• Phase Control
• Static Switching
• Light Dimming
• Motor Speed Control
• Kitchen Equipment
• Power Tools
• Solenoid Valve Controls:
- Dishwashers
- Washing Machines
#
Suitable for General Purpose AC Switching
#
Altgernistor/No Snubber Versions for
Inductive Loads
#
Logic Level Available for Use with
Microcontrollers and Low Level Devices
#
IGT Range 5-50 mA (Q1)
#
VDRM/VRMM 400, 600, 800, 1000V
Absolute Maximum Ratings
RMS On-State Current (full sine wave)
Non Repetitive Surge Peak On-State Current
(Full Cycle, Tj Initial = 25˚C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
=2 x I
GT
, tr<100 ns, Tj = 125˚C
Peak Gate Current @ Tj = 125˚C
Tc = 110˚C
Tc = 100˚C
CONDITIONS
TO-220AB
TO-220AB Iso
F =50 Hz
F =60 Hz
tp = 10 ms
F =120 Hz
tp = 20 µs
SYMBOL
I
T(RMS)
I
TSM
I
2
t
di/dt
I
GM
P
G(AV)
Tstg
Tj
V
ISO
RATING
8A
80A
84A
78A
2
s
100A/µs
4A
1W
-40 to +150˚C
-40 to +125˚C
2500 V
RMS
A1
A2
G
Average Gate Power Dissipation @ Tj = 125˚C
Storage Temperature Range
Operating Junction Temperature Range
Isolation Voltage (CTA Series only)
A2
TO-220AB Isolated
(CTA08)
Electrical Characteristics
ALTERNISTOR/NO SNUBBER AND LOGIC LEVEL (3 Quadrants)
A1
A2
TW
5mA
1.3V
0.2V
10mA
SW
10mA
1.3V
0.2V
15mA
25mA
30mA
40V/µs
5.4A/ms
2.8A/ms
CW
35mA
1.3V
0.2V
35mA
50mA
60mA
400V/µs
BW
50mA
1.3V
0.2V
50mA
70mA
80mA
1000V/µs
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
NOTE 1
G
QI-II-III
QI-II-III
Tj = 125˚C
QI-II-III
V
GT
MAX @ V
D
=12 V, R
L
= 30Ω
V
GD
MIN @ V
D
=V
DRM
, R
L
= 3.3kΩ
I
H
MAX @ I
T
= 500 mA
I
L
MAX @ I
G
= 1.2 I
GT
A2
TO-220AB Non-Isolated
(CTB08)
NOTE 2
QI-III
Q-II
Tj = 125˚C
Tj = 125˚C
Tj = 125˚C
Tj = 125˚C
10mA
15mA
20V/µs
3.5A/ms
1.5A/ms
I
L
MAX @ I
G
= 1.2 I
GT
dv/dt MIN @ VD = 67%V
DRM
(gate open)
NOTE 2
(di/dt)c MIN @ (dv/dt)c = 0.1 V/ms
NOTE 2
(di/dt)c MIN @ (dv/dt)c = 10 V/ms
NOTE 2
G
A1
(di/dt)c MIN without Snubber
NOTE 2 & 4
4.5A/ms
C
B
50mA
100mA
1.3V
0.2V
25mA
QI-III-IV
Q-II
40mA
80mA
200V/µs
5V/µs
50mA
50mA
100mA
400V/µs
10V/µs
7A/ms
STANDARD (4 Quadrants)
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
V
GT
MAX @ V
D
=12 V, R
L
= 30Ω
V
GD
MIN @ V
D
=V
DRM
, R
L
= 3.3kΩ
I
H
MAX @ I
T
= 500 mA
I
L
MAX @ I
G
= 1.2 I
GT
I
L
MAX @ I
G
= 1.2 I
GT
dv/dt MIN @ VD = 67%V
DRM
(gate open)
NOTE 2
(dv/dt)c MIN @ (di/dt)c = 3.5 A/ms
NOTE 4
Tj = 125˚C
Tj = 125˚C
NOTE 2
NOTE 1
QI-II-III
QIV
Q-All
Tj = 125˚C
Q-All
25mA
50mA
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
NOTE 1
GENERAL NOTES
ISO
9001
C E R T I F I E D
1.
2.
3.
4.
Minimum IGT is guaranted at 5% of IGT max.
For both polarities of A2 referenced to A1
All parameters at 25 degrees C unless otherwise specified.
Commutating dv/dt=50V.µsec (exponential to 200Vpk)
Competitive part number cross-reference available at:
www.cynergy3.com
See you in Shenzhen on April 9, 2009!
Hahahaha, this time we finally have a great opportunity, friends in Shenzhen and Guangdong, we can meet and chat~~ Thank you for your long-term support for the EEWORLD forum. On April 9, 2009, EEWORLD...
soso Power technology
The section that should be the most popular is deserted???
Are you not interested in the content on Tao E Tao? Do you have any good suggestions?...
fengzhang2002 Buy&Sell
U disk circuit schematic diagram
:loveliness: U disk circuit diagram :loveliness: :loveliness: :loveliness: :loveliness: :loveliness:...
有时候很傻 PCB Design
BlazeRouter (Chinese) Tutorial
BlazeRouter (Chinese) Tutorial...
lorant PCB Design
Urgent need 16*64LED program
I need a 16*64LED program urgently. The rows are controlled by 138 and the columns are controlled by 595. Can any brother give me some advice? Since the LED is custom-made, I am not very good at contr...
hf02211 Embedded System
Using single chip microcomputer to realize the control design of running water lamp
[align=center][color=blue]Using single-chip microcomputer to realize the control design of running water lamp[/color] [/align][size=14pt][b]Abstract:[/b][size=1]This paper introduces the software and ...
SuperStar515 MCU

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 251  1148  342  347  2104  6  24  7  43  25 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号