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SF55G

Description
5A,300V,Super Fast Rectifiers, Diodes, Single, 300V, 5A, 1.3V, 5A, 150A
File Size265KB,2 Pages
ManufacturerGalaxy Microelectronics
Download Datasheet Parametric View All

SF55G Overview

5A,300V,Super Fast Rectifiers, Diodes, Single, 300V, 5A, 1.3V, 5A, 150A

SF55G Parametric

Parameter NameAttribute value
MakerGalaxy Microelectronics
Parts packaging codeDO-27
Reach Compliance Codeunknown
applicationSUPER FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JEDEC-95 codeDO-27
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage300 V
Maximum reverse current5 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
category
VRRM (V) max300
IF (A) max5
VF (V) max1.3
Condition1_IF (A)5
IFSM (A) max150
IR (uA) max5
Condition2_VR (V)300
trr (ns) max35
AEC QualifiedNO
Maximum operating temperature150
Minimum operating temperature-55
Is it lead-free?no
Comply with ReachYES
RoHS compliantYES
Package OutlinesDO-27
BL
FEATURES
Low cost
Low leakage
GALAXY ELECTRICAL
SF51G --- SF56G
VOLTAGE RANGE: 50 --- 400 V
CURRENT: 5.0 A
SUPER FAST RECTIFIERS
DO - 27
Low forward voltage drop
Glass passivated junction
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SF51G
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
SF52G
100
70
100
SF53G
150
105
150
5.0
SF54G
200
140
200
SF55G
300
210
300
SF56G UNITS
400
280
400
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 5.0A
Maximum reverse current
@T
A
=25
I
FSM
150.0
A
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.95
5.0
100.0
35
50
25
- 55 ----- + 150
- 55 ----- + 150
1.25
V
A
ns
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
(Note3)
30
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number
1769002
BL
GALAXY ELECTRICAL
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