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MT46H32M16LGBF-6AT:C

Description
DDR DRAM, 32MX16, CMOS, PBGA60, 9 X 8 MM, GREEN, PLASTIC, VFBGA-60
Categorystorage    storage   
File Size3MB,95 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
Download Datasheet Parametric View All

MT46H32M16LGBF-6AT:C Overview

DDR DRAM, 32MX16, CMOS, PBGA60, 9 X 8 MM, GREEN, PLASTIC, VFBGA-60

MT46H32M16LGBF-6AT:C Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instructionVFBGA,
Contacts60
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PBGA-B60
JESD-609 codee1
length9 mm
memory density536870912 bit
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals60
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature105 °C
Minimum operating temperature-40 °C
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1 mm
self refreshYES
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width8 mm
Micron Confidential and Proprietary
Advance
512Mb: x16, x32 Mobile LPDDR SDRAM
Features
Mobile Low-Power DDR SDRAM
MT46H32M16LF – 8 Meg x 16 x 4 Banks
MT46H16M32LF – 4 Meg x 32 x 4 Banks
MT46H16M32LG – 4 Meg x 32 x 4 Banks
Features
V
DD
/V
DDQ
= 1.70–1.95V
Bidirectional data strobe per byte of data (DQS)
Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
4 internal banks for concurrent operation
Data masks (DM) for masking write data; one mask
per byte
Programmable burst lengths (BL): 2, 4, 8, or 16
Concurrent auto precharge option is supported
Auto refresh and self refresh modes
1.8V LVCMOS-compatible inputs
Temperature-compensated self refresh (TCSR)
Partial-array self refresh (PASR)
Deep power-down (DPD)
Status read register (SRR)
Selectable output drive strength (DS)
Clock stop capability
64ms refresh
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
-5
-54
-6
-75
Clock Rate
200 MHz
185 MHz
166 MHz
133 MHz
Access Time
5.0ns
5.0ns
5.0ns
6.0ns
Options
V
DD
/V
DDQ
1.8V/1.8V
Configuration
32 Meg x 16 (8 Meg x 16 x 4 banks)
16 Meg x 32 (4 Meg x 32 x 4 banks)
Addressing
JEDEC-standard addressing
Reduced page size
Plastic "green" package
60-ball VFBGA (8mm x 9mm)
1
90-ball VFBGA (8mm x 13mm)
2
Timing – cycle time
5ns @ CL = 3 (200 MHz)
5.4ns @ CL = 3 (185 MHz)
6ns @ CL = 3 (166 MHz)
7.5ns @ CL = 3 (133 MHz)
Power
Standard I
DD2
/I
DD6
Low-power I
DD2
/I
DD6
Operating temperature range
Commercial (0˚ to +70˚C)
Industrial (–40˚C to +85˚C)
Automotive (–40˚C to +105˚C)
Design revision
Notes:
Marking
H
32M16
16M32
LF
LG
BF
B5
-5
-54
-6
-75
None
L
None
IT
AT
:C
1. Only available for x16 configuration.
2. Only available for x32 configuration.
PDF: 09005aef83dd2b3e
t67m_512mb_mobile_lpddr.pdf - Rev. B 2/10 EN
1
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron's production data sheet specifications.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2009 Micron Technology, Inc. All rights reserved.
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