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SST4416-SOT-23

Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size444KB,11 Pages
ManufacturerLinear ( ADI )
Websitehttp://www.analog.com/cn/index.html
Environmental Compliance  
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SST4416-SOT-23 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, ROHS COMPLIANT, PLASTIC PACKAGE-3

SST4416-SOT-23 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerLinear ( ADI )
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ConfigurationSINGLE
FET technologyJUNCTION
Maximum feedback capacitance (Crss)4 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature135 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)10 dB
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
2N/SST4416 2N4416A
Linear Integrated Systems
FEATURES
Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A
VERY LOW NOISE FIGURE (400 MHz)
EXCEPTIONAL GAIN (400 MHz)
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain or Gate to Source LS4416
Gate to Drain or Gate to Source LS4416A
-30V
-35V
*Optional Package For 2N4416
10mA
300mW
-65 to +200 °C
-55 to +135 °C
4 dB (max)
10 dB (min)
2N SERIES
2N SERIES*
SST SERIES
SOT-23
TOP VIEW
D
S D G
1 2 3
S
1
4
1
3
N-CHANNEL JFET
HIGH FREQUENCY AMPLIFIER
TO-92
TO-72
BOTTOM VIEW
BOTTOM VIEW
D
2
3
G
G
S
2
C
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BV
GSS
V
GS(off)
I
DSS
I
GSS
g
fs
g
os
C
iss
C
rss
C
oss
e
n
CHARACTERISTIC
Gate to Source
Breakdown Voltage
Gate to Source
Cutoff Voltage
2N/SST4416
2N4416A
2N/SST4416
2N4416A
2N
SST
4500
-2.5
5
MIN
-30
-35
-6
-6
15
-0.1
-1.0
7500
50
0.8
4
2
6
nV/√Hz
V
DS
= 10V, V
GS
= 0V,
f
= 1kHz
pF
V
DS
= 15V, V
GS
= 0V,
f
= 1MHz
mA
nA
µS
V
V
DS
= 15V, I
D
= 1nA
V
DS
= 15V, V
GS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS
= -15V, V
DS
= 0V
V
DS
= 15V, V
GS
= 0V,
f
= 1kHz
TYP
MAX UNITS
CONDITIONS
I
G
= -1µA, V
DS
= 0V
Gate to Source Saturation Current
Gate Leakage Current
Forward Transconductance
Output Conductance
Input Capacitance
2
Reverse Transfer Capacitance
2
Output Capacitance
2
Equivalent Input Noise Voltage
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

SST4416-SOT-23 Related Products

SST4416-SOT-23 2N4416-TO-92 2N4416-TO-72 2N4416A-TO-92 2N4416A-TO-72
Description RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-72, ROHS COMPLIANT, METAL PACKAGE-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-72, ROHS COMPLIANT, METAL PACKAGE-4
Is it lead-free? Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to
package instruction SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-MBCY-W4 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-MBCY-W4
Contacts 3 3 4 3 4
Reach Compliance Code compliant compli compli compli compli
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
FET technology JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION
Maximum feedback capacitance (Crss) 4 pF 4 pF 4 pF 4 pF 4 pF
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G3 O-PBCY-T3 O-MBCY-W4 O-PBCY-T3 O-MBCY-W4
Number of components 1 1 1 1 1
Number of terminals 3 3 4 3 4
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 135 °C 135 °C 135 °C 135 °C 135 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY METAL PLASTIC/EPOXY METAL
Package shape RECTANGULAR ROUND ROUND ROUND ROUND
Package form SMALL OUTLINE CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 260 NOT SPECIFIED 260 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Minimum power gain (Gp) 10 dB 10 dB 10 dB 10 dB 10 dB
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO NO NO NO
Terminal form GULL WING THROUGH-HOLE WIRE THROUGH-HOLE WIRE
Terminal location DUAL BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 40 NOT SPECIFIED 40 NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON
JESD-609 code e3 e3 - e3 -
Humidity sensitivity level 1 1 - 1 -
Terminal surface Matte Tin (Sn) Matte Tin (Sn) - Matte Tin (Sn) -
Parts packaging code - TO-92 TO-72 TO-92 TO-72
JEDEC-95 code - TO-92 TO-72 TO-92 TO-72
Base Number Matches - 1 1 1 -

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