GI850 thru GI858
Vishay General Semiconductor
Fast Switching Plastic Rectifier
FEATURES
• Fast switching for high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-201AD
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
I
R
V
F
T
J
max.
3.0 A
50 V to 800 V
100 A
200 ns
10 μA
1.25 V
150 °C
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
Note
• These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case:
DO-201AD, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum non-repetitive peak reverse voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 90 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating junction and
storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
V
RSM
I
F(AV)
I
FSM
T
J
, T
STG
GI850
50
35
50
75
GI851
100
70
100
150
GI852
200
140
200
250
3.0
100
- 50 to + 150
GI854
400
280
400
450
GI856
600
420
600
650
GI858
800
560
800
880
UNIT
V
V
V
V
A
A
°C
Document Number: 88630
Revision: 10-Nov-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
GI850 thru GI858
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum
instantaneous
forward voltage
Maximum DC reverse
current at rated DC
blocking voltage
Maximum reverse
recovery current
Maximum reverse
recovery time
Typical junction
capacitance
TEST CONDITIONS
3.0 A
9.4 A
T
A
= 25 °C
V
F
T
J
= 175 °C
T
A
= 25 °C
I
R
T
A
= 100 °C
I
F
= 1.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
I
F
= 1.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
4.0 V, 1 MHz
I
RM(REC)
t
rr
C
J
150
150
200
200
2.0
28
250
300
500
ns
A
pF
1.10
10
μA
SYMBOL
GI850
GI851
GI852
1.25
V
GI854
GI856
GI858
UNIT
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
θJA
(1)
R
θJL
(1)
GI850
GI851
GI852
22
°C/W
8.0
GI854
GI856
GI858
UNIT
Note
(1)
Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, with both leads equally heat sink
ORDERING INFORMATION
(Example)
PREFERRED P/N
GI856-E3/54
GI856-E3/73
UNIT WEIGHT (g)
1.1
1.1
PREFERRED PACKAGE CODE
54
73
BASE QUANTITY
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
8.0
1000
L = Lead Length
8.3 ms
Single
Half
Sine-Wave
Average Forward Rectified Current (A)
6.0
4.0
0.8" x 0.8" x 0.04"
(20 mm x 20 mm x 1 mm)
Copper Heatsink
Peak Forward
Surge
Current (A)
T
L
= Lead Temperature
L=
0.2
5
"
(
6.3
mm
L=
)
0.3
75
"
(9
.5
mm
)
T
J
= 25 °C
100
Non-Repetitive
T
J
= 150 °C
2.0
T
A
= Ambient Temperature
0.375" (9.5 mm) Lead Length
T
J
= 25 °C
Repetitive
10
1
10
T
J
= 150 °C
0
30
50
70
90
110
130
150
170
100
Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curves
Fig. 2 - Maximum Peak Forward Surge Current
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88630
Revision: 10-Nov-09
GI850 thru GI858
Vishay General Semiconductor
100
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Instantaneous Forward Current (A)
10
1
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0.1
0.01
0.4
Junction Capacitance (pF)
10
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10
Instantaneous Reverse Current (μA)
T
J
= 100 °C
1
T
J
= 50 °C
0.1
T
J
= 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Document Number: 88630
Revision: 10-Nov-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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www.vishay.com
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
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Document Number: 91000