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BTB08-600BW3G

Description
800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
CategoryAnalog mixed-signal IC    Trigger device   
File Size82KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BTB08-600BW3G Overview

800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB

BTB08-600BW3G Parametric

Parameter NameAttribute value
Brand NameON Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionLEAD FREE, CASE 221A-09, 3 PIN
Contacts3
Manufacturer packaging code221A-07
Reach Compliance Code_compli
ECCN codeEAR99
Factory Lead Time1 week
Shell connectionMAIN TERMINAL 2
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage2000 V/us
Maximum DC gate trigger current50 mA
Maximum DC gate trigger voltage1.1 V
Maximum holding current50 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current8 A
Off-state repetitive peak voltage600 V
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device type4 QUADRANT LOGIC LEVEL TRIAC
BTB08-600BW3G,
BTB08-800BW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full‐wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
http://onsemi.com
Blocking Voltage to 800 V
On‐State Current Rating of 8 Amperes RMS at 25°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt - 2000 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO‐220AB Package
High Commutating dI/dt - 4 A/ms minimum at 125°C
These are Pb-Free Devices
Rating
Symbol
V
DRM,
V
RRM
600
800
I
T(RMS)
I
TSM
8.0
90
A
A
Value
Unit
V
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
MT2
G
4
MT1
MARKING
DIAGRAM
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Peak Repetitive Off-State Voltage (Note 1)
(T
J
= -40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTB08-600BW3G
BTB08-800BW3G
On‐State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
C
= 80°C)
Peak Non‐Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
C
= 25°C)
Circuit Fusing Consideration (t = 10 ms)
Non-Repetitive Surge Peak Off-State
Voltage (T
J
= 25°C, t = 10ms)
Peak Gate Current (T
J
= 125°C, t = 20ms)
Peak Gate Power
(Pulse Width
1.0
ms,
T
C
= 80°C)
Average Gate Power (T
J
= 125°C)
Operating Junction Temperature Range
Storage Temperature Range
1
2
3
TO-220AB
CASE 221A
STYLE 4
BTB08-xBWG
AYWW
I
2
t
V
DSM/
V
RSM
I
GM
P
GM
P
G(AV)
T
J
T
stg
36
V
DSM/
V
RSM
+100
4.0
20
1.0
-40 to +125
-40 to +150
A
2
sec
V
A
W
W
°C
°C
x
A
Y
WW
G
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb-Free Package
PIN ASSIGNMENT
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
BTB08-600BW3G
BTB08-800BW3G
Package
TO-220AB
(Pb-Free)
TO-220AB
(Pb-Free)
Shipping
50 Units / Rail
50 Units / Rail
*For additional information on our Pb-Free strategy and
soldering details, please download the ON Semicon‐
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
1
February, 2008 - Rev. 1
Publication Order Number:
BTB08-600BW3/D

BTB08-600BW3G Related Products

BTB08-600BW3G BTB08-800BW3G
Description 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
Brand Name ON Semiconduc ON Semiconduc
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker ON Semiconductor ON Semiconductor
Parts packaging code TO-220AB TO-220AB
package instruction LEAD FREE, CASE 221A-09, 3 PIN LEAD FREE, CASE 221A-09, 3 PIN
Contacts 3 3
Manufacturer packaging code 221A-07 221A-07
Reach Compliance Code _compli _compli
ECCN code EAR99 EAR99
Factory Lead Time 1 week 1 week
Shell connection MAIN TERMINAL 2 MAIN TERMINAL 2
Configuration SINGLE SINGLE
Critical rise rate of minimum off-state voltage 2000 V/us 2000 V/us
Maximum DC gate trigger current 50 mA 50 mA
Maximum DC gate trigger voltage 1.1 V 1.1 V
Maximum holding current 50 mA 50 mA
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum rms on-state current 8 A 8 A
Off-state repetitive peak voltage 600 V 800 V
surface mount NO NO
Terminal surface Tin (Sn) Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Trigger device type 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC
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